TITLE

Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys

AUTHOR(S)
Krestnikov, I. L.; Heitz, R.; Ledentsov, N. N.; Hoffmann, A.; Mintairov, A. M.; Kosel, T. H.; Merz, J. L.; Soshnikov, I. P.; Ustinov, V. M.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3728
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the optical properties of pseudo-alloy monolayer InAs/GaAsN superlattices with highly planar interfaces. In spite of the two-dimensional growth mode, we found that the photoluminescence (PL) reveals strong exciton localization through the whole PL band, dominating the spectrum up to high excitation densities and observation temperatures. Pump-and-probe PL experiments provide the following time constants: (a) the exciton relaxation time to the ground states of the localization regions is found to be ∼40–70 ps, depending on the photon energy, and (b) the time for depopulation of these localized states is between 2 and 4 ns. © 2003 American Institute of Physics.
ACCESSION #
11210017

 

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