Band offsets for the epitaxial TiO[sub 2]/SrTiO[sub 3]/Si(001) system

Tuan, A. C.; Kaspar, T. C.; Droubay, T.; Rogers, J. W.; Chambers, S. A.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3734
Academic Journal
We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO[sub 2] (anatase)/SrTiO[sub 3]/Si(001) system. The valence band offsets are -2.1±0.1 eV and +0.2±0.1 eV at the SrTiO[sub 3]/Si and TiO[sub 2]/SrTiO[sub 3] heterojunctions, respectively. Assuming bulk band gaps for the SrTiO[sub 3] and TiO[sub 2] epitaxial films, the associated conduction band offsets are +0.1±0.1 eV and +0.1±0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO[sub 2] anatase into Si should be facile. © 2003 American Institute of Physics.


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