TITLE

Magnetoresistance in boron carbide junctions

AUTHOR(S)
Bernard, L.; Monson, J.; Sokolov, A.; Liu, Zong-Yuan; Yang, C.-S.; Dowben, P. A.; Doudin, B.; Harken, A.; Welsch, P.; Robertson, B. W.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3743
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoemission and electric transport properties of ferromagnet–insulator–ferromagnet junctions with boron carbide (C[sub 2]B[sub 10]) dielectric barrier are presented. Using a non-oxide barrier confidence avoids oxidation of the interfaces with the ferromagnetic layers. Photoemission confirms chemical abruptness of the interface. Magnetoresistance ratios reaching 50% are observed at low temperatures, and large nonlinearity in the current–voltage curves show that impurities in the junctions play a key role. © 2003 American Institute of Physics.
ACCESSION #
11210012

 

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