TITLE

Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications

AUTHOR(S)
Kim, K. S.; Lee, C. F.; Lim, S. H.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3761
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetization reversal behavior is examined under various nonuniform fields, the conditions of which are relevant to magnetic random access memory applications. During the magnetization reversal, the end domains play a key role at a uniform field, but they play a negligible role at a nonuniform field. Instead, a ripple pattern is initially formed in the interior and it progresses to form a vortex, resulting in a reversed domain. The switching field is found to be greater in the case of a nonuniform field, but, under a bias field, it is reduced greatly to a level similar to that for a uniform field. This result may indicate a wide window for the bit selectivity under a nonuniform field in magnetic random access memory applications. © 2003 American Institute of Physics.
ACCESSION #
11210006

 

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