Optical and electrical properties of in situ-annealed p-type Hg[sub 0.7]Cd[sub 0.3]Te epilayers grown on CdTe buffer layers for applications as infrared detectors

Ryu, Y. S.; Heo, Y. B.; Song, B. S.; Yoon, S. J.; Kim, Y. J.; Kang, T. W.; Kim, T.W.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3776
Academic Journal
Hall-effect, Fourier transform infrared (FTIR) transmission, and photopresponse measurements were performed to investigate the optical and electrical properties of as-grown and in situ-annealed Hg[sub 0.7]Cd[sub 0.3]Te epilayers grown on CdTe buffers on GaAs (211) B substrates layers by using molecular-beam epitaxy. Hall-effect measurements showed that as-grown n-Hg[sub 0.7]Cd[sub 0.3]Te epilayers were converted to p-Hg[sub 0.7]Cd[sub 0.3]Te epilayers due to in situ annealing. The carrier concentration and the mobility as functions of the annealing temperature were determined from the Hall-effect measurements. The FTIR spectra showed that the transmission intensity had increased in comparison to that of the as-grown Hg[sub 0.7]Cd[sub 0.3]Te epilayer. Hall-effect measurements showed that n-Hg[sub 0.7]Cd[sub 0.3]Te epilayers were converted to p-Hg[sub 0.7]Cd[sub 0.3]Te epilayers. The activation energy and the carrier lifetime of the annealed Hg[sub 0.7]Cd[sub 0.3]Te epilayer were 0.25 eV and 160 ns, respectively. These results indicate that p-type Hg[sub 0.7]Cd[sub 0.3]Te epilayers grown on CdTe buffer layers due to in situ thermal annealing hold promise for potential applications in infrared detector technologies. © 2003 American Institute of Physics.


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