Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As

Jin Soo Kim, Shunri; Jin Hong Lee, Shunri; Sung Ui Hong, Shunri; Won Seok Han, Shunri; Ho-sang Kwack, Shunri; Dae Kon Oh, Shunri
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3785
Academic Journal
Influences of a thin In[sub 0.32]Ga[sub 0.68]As layer on the structural and optical properties of self-assembled InAs quantum dots (QDs) embedded in an InAl(Ga)As matrix, which was lattice-matched to an InP substrate, were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. AFM and TEM images showed that the size of QDs grown on a thin In[sub 0.32]Ga[sub 0.68]As layer was increased, with a reduction in size fluctuation compared to that of QDs on an InAl(Ga)As layer. The shape of the QD was also more isotropic, indicating that the QD would be closer to an ideal zero-dimensional system. The PL peak position of the InAs QDs grown on a 1.5 nm In[sub 0.32]Ga[sub 0.68]As layer was 1.55 μm, with linewidth broadening of 64 meV that was somewhat narrower than those of the QD samples without the In[sub 0.32]Ga[sub 0.68]As layer, which agreed well with the AFM and TEM results. © 2003 American Institute of Physics.


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