Scanning tunneling microscope mediated nanostructure fabrication from GeH[sub 4] on Si(111)-(7×7)

Schoffel, U. R.; Rauscher, H.; Behm, R. J.
November 2003
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3794
Academic Journal
The tungsten tip of a scanning tunneling microscope, covered with GeH[sub x] by exposure to GeH[sub 4], was used to locally grow nanometer-sized Ge or GeH[sub x] islands on a Si(111)-(7×7) surface. This was achieved by transfer of material from the tip to the surface, induced by voltage pulses. A model, based on the diffusion of adsorbates on the tip and desorption stimulated by an electric field, is presented to account for the results. © 2003 American Institute of Physics.


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