TITLE

Field emission from zinc oxide nanopins

AUTHOR(S)
Xu, C. X.; Suna, X. W.
PUB. DATE
November 2003
SOURCE
Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3806
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanostructural zinc oxide pins have been fabricated by vapor transport on copper-coated silicon wafer. The nanopins are composed of hexagonal wurtzite-phase zinc oxide with single crystal quality. The growth process includes two steps: (1) growth of a micron-sized zinc oxide dot on the substrate and (2) growth of a sharp tip from the zinc oxide dot. The field emission of the nanopins shows a low field emission threshold (1.92 V/μm at a current density of 0.1 μA/cm[sup -2]) and high current density with a field enhancement factor of 657. The emission current density and the electric field follow Fowler–Nordheim relationship. The good performance for field emission is attributed to the single-crystalline structure and the nanopin geometry. © 2003 American Institute of Physics.
ACCESSION #
11209991

 

Related Articles

  • Catalytic synthesis of ZnO nanorods on patterned silicon wafer–An optimum material for gas sensor. Panda, S. K.; Jacob, C. // Bulletin of Materials Science;2009, Vol. 32 Issue 5, p493 

    ZnO nanorods have been synthesized over etch-patterned Si (110) wafer using annealed silver thin film as growth catalyst. The growth of ZnO nanorods were performed by a two-step process. Initially, the deposition of Zn thin film was done on the annealed silver catalyst film over etch-patterned...

  • X-ray study of defect depth distribution in silicon wafers after heat treatment. Holý, V.; Kubeˇna, J.; Bochnícˇek, Z. // Journal of Applied Physics;10/1/1991, Vol. 70 Issue 7, p3537 

    Presents a study which investigated a surface defect-free denuded zone in silicon wafers using x-ray double-crystal diffractometry. Comparison of the thickness values obtained by the method with results from chemical etching of wafer cross sections; Difference in the mean lattice parameter of...

  • Growing improved silicon crystals for VLSI/ULSI applications. Kim, Kyong-Min // Solid State Technology;Nov96, Vol. 39 Issue 11, p70 

    Focuses on the production of silicon crystals for VLSI/ULSI applications. Continuous progress shown by the Czochralski silicon-crystal technology; Crystal growth and oxygen content; Point defects in silicon wafers; Computer simulation of crystal growth; Point-defect dynamics; Crystal growth for...

  • Giant positive magnetoresistance in Co-doped ZnO nanocluster films. Tian, Y. F.; Antony, J.; Souza, R.; Yan, S. S.; Mei, L. M.; Qiang, Y. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p193109 

    We have studied nanostructures and magnetoresistance of 0.5%, 12%, and 30% Co-doped ZnO nanocluster films which were deposited by a third generation sputtering-gas-aggregation source on Si wafer. Microstructure analysis is performed by x-ray photoelectron spectrometer, transmission electron...

  • Determination of nanometer structures and surface roughness of polished Si wafers by scanning tunneling microscopy. Hartmann, E.; Hahn, P. O.; Behm, R. J. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4273 

    Presents a study which determined the nanometer structures and surface roughness of polished silicon wafers by scanning tunneling microscopy. Sample selection; Use of data-evaluation schemes; Results of the calculations.

  • Influence of phosphorus diffusion on the recombination strength of dislocations in float zone silicon wafers. Simon, J. J.; Périchaud, I.; Burle, N.; Pasquinelli, M.; Martinuzzi, S. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p4921 

    Focuses on a study which investigated dislocation arrays in float zone grown silicon wafers by the light beam induced current mapping technique. Experimental details; Results; Discussion; Conclusion.

  • Effects of 450 °C thermal annealing upon oxygen precipitation in heavily B- and Sb-doped Czochralski Si. Hahn, S.; Arst, M.; Rek, Z. U.; Stojanoff, V.; Bulla, D. A.; Castro, W. E.; Tiller, W. A. // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p401 

    In this study we investigated effects of 450 °C preanneal upon oxygen precipitation during subsequent low (700 °C)-medium (950 °C) temperature two-step furnace anneals in heavily B- and Sb-doped Czochralski Si wafers. Our optical microscopy and synchrotron radiation section topographic...

  • Noncontact minority-carrier lifetime measurement at elevated temperatures for metal-doped Czochralski silicon crystals. Shimura, F.; Okui, T.; Kusama, T. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p7168 

    Presents an overview of a study which measured minority-carrier recombination lifetimes with a noncontact laser and microwave method for metal-doped p-type Czochralski silicon crystals. Method used in growing silicon wafers; Measurement of decay of minority carriers generated by irradiation...

  • Trapping of cubic ZnO nanocrystallites at ambient conditions. Decremps, F.; Pellicer-Porres, J.; Datchi, F.; Itié, J. P.; Polian, A.; Baudelet, F.; Jiang, J. Z. // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4820 

    Dense powder of nanocrystalline ZnO has been recovered at ambient conditions in the metastable cubic structure after a heat treatment at high pressure (15 GPa and 550 K). Combined x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS) experiments have been performed to probe both...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics