Unusual luminescence lines in GaN

Reshchikov, M. A.; Huang, D.; Yun, F.; Visconti, P.; He, L.; Morkoç, H.; Jasinski, J.; Liliental-Weber, Z.; Molnar, R.J.; Park, S.S.; Lee, K.Y.
November 2003
Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p5623
Academic Journal
A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks (at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV) were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces. © 2003 American Institute of Physics.


Related Articles

  • Free excitons with n=2 in bulk GaN. Steube, M.; Reimann, K. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p948 

    Presents the two-photon measurements of free n=2 excitons in bulk gallium nitride. Computations of band gaps and exciton binding energies; Use of luminescence for two-photon absorption analysis; Details on the effective hole masses of valence bands.

  • Optical transitions in Pr-implanted GaN. Zavada, J.M.; Mair, R.A. // Applied Physics Letters;8/9/1999, Vol. 75 Issue 6, p790 

    Reports on the use of photoluminescence (PL) spectroscopy to investigate praseodymium related transitions in gallium nitride. Annealing of the implanted samples in nitrogen to facilitate recovery from implantation related damage; Dependence of PL emission on sample temperature; Absence of...

  • Mode characterization of sub-micron equilateral triangular microcavity including material's dispersion effects. Lai, C.-M.; Yeh, P. C.; Peng, L.-H. // Journal of Applied Physics;May2012, Vol. 111 Issue 10, p103111 

    We report the study of resonant modes in an equilateral triangular gallium nitride (GaN) microcavity, with the material's dispersion taken into account. From the polarization-resolved photo-luminescence measurements, we observed the resonance of GaN bandedge emission with the cavity modes to be...

  • Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100). Liu, R.; Bayram, C. // Journal of Applied Physics;2016, Vol. 120 Issue 2, p025106-1 

    Hexagonal and cubic GaN—integrated on on-axis Si(100) substrate by metalorganic chemical vapor deposition via selective epitaxy and hexagonal-to-cubic-phase transition, respectively—are studied by temperature- and injection-intensity-dependent cathodoluminescence to explore the...

  • Correlation between structure and photoluminescence properties in InGaN epilayers with thicknesses below and above critical thickness. Dobrovolskas, D.; Vaitkevicˇius, A.; Mickevicˇius, J.; Tuna, Ö.; Giesen, C.; Heuken, M.; Tamulaitis, G. // Journal of Applied Physics;Oct2013, Vol. 114 Issue 16, p163516 

    The layer strain and its relaxation effects on the photoluminescence (PL) of InGaN layers are studied using confocal microscopy. The relaxation imposed structural changes are studied by X-ray diffraction (XRD) reciprocal space mapping and atomic force microscopy. Initial layer relaxation...

  • Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers. Mickevičius, J.; Aleksiejünas, R.; Shur, M. S.; Sakalauskas, S.; Tamulaitis, G.; Fareed, Q.; Gaska, R. // Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041910 

    GaN epilayers grown on sapphire and SiC substrates and exhibiting yellow and blue luminescence were studied using photoluminescence spectroscopy, light-induced grating, and Kelvin probe techniques. For epilayers on sapphire substrates, we observed practically no yellow luminescence (YL) and...

  • Quantum-transfer-efficiency excitation spectroscopy: Application to direct observation of yellow luminescent level of GaN. Tianshu Lai; Jinhui Wen; Weizhu Lin // Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041102 

    A quantum-transfer-efficiency excitation spectroscopy (QTEES) is developed. It measures the quantum transfer efficiency from the photoexcited level to the initial level of the luminescence measured. It is self-normalized and based on the relative measurement of photoluminescence intensity. The...

  • Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices. Yang, C. L.; Liang, H.; Yu, L. S.; Qi, Y. D.; Wang, D. L.; Lu, Z. D.; Lau, K. M.; Ding, L.; Wang, J. N.; Fung, K. K.; Ge, W. K. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p765 

    Temperature dependent electroluminescence (EL) and photoluminescence (PL) spectra were studied for blue, green and yellow-green InGaN/GaN light emitting devices (LEDs). Selective excitation has unambiguously proven that the origin of the 3.27 eV defect peak was radiative recombination at the...

  • Optical properties of light-hole excitons in GaN epilayers. Fan Zhang; Xu, S. J.; Ning, J. Q.; Zheng, C. C.; Zhao, D. G.; Yang, H.; Che, C. M. // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p116103 

    Optical properties of light-hole free exciton (FXB) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FXA) have strong response, FXB band can be well...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics