TITLE

AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

AUTHOR(S)
JianPing Zhang, P.; Shuai Wu; Shiva Rai, P.; Vasavi Mandavilli, P.; Vinod Adivarahan, P.; Chitnis, Ashay; Shatalov, Maxim; Khan, Muhammad Asif
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3456
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a deep UV light-emitting diode over sapphire substrate with AlGaN multiple-quantum-well active region. Pulsed atomic-layer epitaxy deposited low-defect AlN/AlGaN buffers and an optimized active layer design yielded a sharp quantum-well emission peak at 287 nm and very little long-wave secondary emission. For a 100 μm×100 μm unpackaged device, a power of 27 μW at 20 mA dc and a peak external quantum efficiency of 0.1% at 100 mA pulse pumping were measured. Flip-chip packaging should increase these numbers nearly by a factor of 3. © 2003 American Institute of Physics.
ACCESSION #
11123040

 

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