AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission

JianPing Zhang, P.; Shuai Wu; Shiva Rai, P.; Vasavi Mandavilli, P.; Vinod Adivarahan, P.; Chitnis, Ashay; Shatalov, Maxim; Khan, Muhammad Asif
October 2003
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3456
Academic Journal
We report on a deep UV light-emitting diode over sapphire substrate with AlGaN multiple-quantum-well active region. Pulsed atomic-layer epitaxy deposited low-defect AlN/AlGaN buffers and an optimized active layer design yielded a sharp quantum-well emission peak at 287 nm and very little long-wave secondary emission. For a 100 μm×100 μm unpackaged device, a power of 27 μW at 20 mA dc and a peak external quantum efficiency of 0.1% at 100 mA pulse pumping were measured. Flip-chip packaging should increase these numbers nearly by a factor of 3. © 2003 American Institute of Physics.


Related Articles

  • In[sub x]Ga[sub 1-x]N light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off. Wong, W. S.; Wong, W.S.; Sands, T.; Cheung, N. W.; Cheung, N.W.; Kneissl, M.; Bour, D. P.; Mei, P.; Romano, L. T.; Johnson, N. M. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    Indium-gallium nitride (In[sub x]Ga[sub 1-x]N) single-quantum-well (SQW) light emitting diodes (LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film In[sub x]Ga[sub 1-x]N SQW LED structures were first bonded onto a n[sup +]-Si...

  • Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer. Huh, Chul; Lee, Ji-Myon; Kim, Dong-Joon; Park, Seong-Ju // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2248 

    The fabrication and characterization of an InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) with a SiO[sub 2] current blocking layer inserted beneath the p-pad electrode is described. The light-output power and external quantum efficiency for the InGaN/GaN MQW LED chip with a...

  • High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes. Hahn, Y. B.; Choi, R. J.; Hong, J. H.; Park, H. J.; Choi, C. S.; Lee, H. J. // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1189 

    Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of...

  • A vertical injection blue light emitting diode in substrate separated InGan heterostructures. Song, Y.-K.; Diagne, M. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3720 

    Demonstrates a vertical injection, light emitting indium gallium nitride quantum well diode by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. Light emitter...

  • GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy. Grandjean, N.; Massies, J. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3616 

    Discusses the growth of gallium indium nitride (GaInN)/gallium nitride (GaN) multiple-quantum-well (MQW) light-emitting diodes by molecular beam epitaxy on c-plane sapphire using ammonia (NH[sub 3]). Photoluminescence performed on both GaInN thin layers and GaInN/GaN MQW; Transmission electron...

  • Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes. Cao, X. A.; LeBoeuf, S. F.; Rowland, L. B.; Yan, C. H.; Liu, H. // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3614 

    Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) has been investigated to illustrate the role of localization effects in carrier capture and recombination. The devices have identical structure but with varying indium content in the...

  • Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN[sub x] interlayer in n-GaN layers. Ru-Chin Tu; Chang-Cheng Chuo; Shyi-Ming Pan, M.; Yu-Mei Fan, M.; Ching-En Tsai; Te-Chung Wang; Chun-Ju Tun; Gou-Chung Chi; Bing-Chi Lee, M.; Chien-Ping Lee // Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3608 

    Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiN[sub x] interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiN[sub x] interlayer...

  • InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures. Wierer, J.J.; Krames, M.R.; Epler, J.E.; Gardner, N.F.; Craford, M.G.; Wendt, J.R.; Simmons, J.A.; Sigalas, M.M. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3885 

    Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal contact is minimized because the top GaN layers...

  • Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes. McGroddy, K.; David, A.; Matioli, E.; Iza, M.; Nakamura, S.; DenBaars, S.; Speck, J. S.; Weisbuch, C.; Hu, E. L. // Applied Physics Letters;9/8/2008, Vol. 93 Issue 10, p103502 

    Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics