TITLE

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

AUTHOR(S)
Kaneta, Akio; Mutoh, Takashi; Kawakami, Yoichi; Fujita, Shigeo; Marutsuki, Giichi; Narukawa, Yukio; Mukai, Takashi
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3462
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Precise identification of recombination dynamics based on local, radiative, and nonradiative recombination has been achieved at room temperature in a blue-light-emitting In[sub x]Ga[sub 1-x]N/GaN single-quantum-well structure by comparing the photoluminescence (PL) spectra taken by illumination-collection mode (I-C mode) and those by illumination mode (I-mode) in scanning near-field microscopy. The PL data mapped with PL lifetimes, as well as with PL spectra, revealed that the probed area could be classified into four different regions whose dominating processes are (1) radiative recombination within a probing aperture, (2) nonradiative recombination within an aperture, (3) diffusion of photogenerated excitons/carriers out of an aperture resulting in localized luminescence, and (4) the same diffusion process as (3), but resulting in nonradiative recombination. © 2003 American Institute of Physics.
ACCESSION #
11123038

 

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