Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers

Kasu, M.; Makimoto, T.; Ebert, W.; Kohn, E.
October 2003
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3465
Academic Journal
Stacking faults containing microtwins in (111)-oriented diamond layers grown on a high-pressure high-temperature (HPHT)-synthesized diamond substrate by chemical vapor deposition start to form just on the substrate. The microtwins in the stacking faults form on the {111} plane, not on the (111) substrate plane. To explain these results, we propose an atomic-scale model in which a foreign atom remains on the HPHT substrate surface and a C atom on the foreign atom cannot form a covalent bond with it. Therefore, twinning of the C atom occurs on the {111} plane. The next C atoms bond with the twinned C atom in an untwinned (normal crystalline) relation. Consequently, the formation of stacking faults that contain microtwins occurs. © 2003 American Institute of Physics.


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