TITLE

High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride

AUTHOR(S)
Wang, Y.Q.; Wang, Y.G.; Cao, L.; Cao, Z.X.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3474
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Confinement of silicon nanoparticles in silicon nitride instead of an oxide matrix might materially facilitate its potential applications as a light-emitting component in optoelectronics. We report in this letter the production of high-density (up to 4.0×10[sup 12]/cm[sup 2] from micrographs) silicon nanoparticles in SiN[sub x] thin films by chemical vapor deposition on cold substrates. Strong room-temperature photoluminescence was observed in the whole visible light range from the deposits that were postannealed at 500 °C for 2 min. The Si-in-SiN[sub x] films provide a significantly more effective photoluminescence than Si-in-SiO[sub x] fabricated with similar processing parameters: for blue light, the external quantum efficiency is over three times as large. The present results demonstrate that the nanostructured Si-in-SiN[sub x] system can be a very competitive candidate for the development of tunable high-efficiency light-emitting devices. © 2003 American Institute of Physics.
ACCESSION #
11123034

 

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