TITLE

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

AUTHOR(S)
Xu, S.J.; Wang, H.J.; Cheung, S.H.; Li, Q.; Dai, X.Q.; Xie, M.H.; Tong, S.Y.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3477
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A number of wurtzite GaN epilayers directly grown on 4H-SiC (0001) misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ∼70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8° and 21°. Stacking mismatch boundaries are supposed to be the candidate causing the optical transition. Combined with the low-temperature photoluminescence excitation spectra of the films, the location of the electronic level induced by the structural defect is determined to be about 100 meV above the valence-band maximum of GaN. © 2003 American Institute of Physics.
ACCESSION #
11123033

 

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