TITLE

Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN

AUTHOR(S)
Jeong, T.S.; Youn, C.J.; Hab, M.S.; Yang, J.W.; Lim, K.Y.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3483
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the influence of electric fields on the Mg-doped p-GaN by using Raman scattering and photocurrent (PC) measurement. It has been observed that the E[sub 2] (LO) mode was quenched upon increasing the electric field. To explain this effect, the combined results obtained from the electric-field-induced Raman scattering and the PC measurement were analyzed. As a result, we have found that the damping of E[sub 2] (LO) mode is caused to the phonon–hole scattering due to a strong interaction between the phonons and the photogenerated hole carriers with increasing the applied electric field. © 2003 American Institute of Physics.
ACCESSION #
11123031

 

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