SnGe superstructure materials for Si-based infrared optoelectronics

Bauer, M.R.; Cook, C.S.; Aella, P.; Tolle, J.; Kouvetakis, J.; Crozier, P.A.; Chizmeshya, A.V.G.; Smith, David J.; Zollner, S.
October 2003
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3489
Academic Journal
We report growth of device-quality, single-crystal Sn[sub x]Ge[sub 1-x] alloys (with x=0.02–0.2) directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. The high Sn-content materials are stabilized with ordered superstructures that gives rise to a layered structure adjacent to the Si substrate. Density functional theory simulations were used to elucidate the structural and bonding behavior of this material. Optical determinations show a Ge-like band structure that is substantially redshifted compared to that of elemental Ge. Thus, these systems are excellent candidates for a new generation of infrared devices, with the critical advantage that they can be grown directly on Si. © 2003 American Institute of Physics.


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