Shouldering in B diffusion profiles in Si: Role of di-boron diffusion

Hwang, Gyeong S.; Goddard III, William A.
October 2003
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3501
Academic Journal
The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (B[sub s]–B[sub i]) diffusion can become as important as boron-interstitial pair (B[sub s]–Si[sub i]) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer et al. [Appl. Phys. Lett. 74, 3996 (1999)] for high-temperature (≈1200 °C) postimplantion annealing of ultralow-energy (≈500 eV) implanted high-concentration (>10[sup 19] cm[sup -3]) boron in silicon. © 2003 American Institute of Physics.


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