TITLE

Formation of low resistance and transparent ohmic contacts to p-type GaN using Ni–Mg solid solution

AUTHOR(S)
Song, June-O; Dong-Seok Leem; Tae-Yeon Seong
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3513
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the formation of Ni–Mg solid solution/Au ohmic contacts on p-GaN (5×10[sup 17] cm[sup -3]). The as-deposited Ni–Mg solid solution (8 nm)/Au (8 nm) contact shows near-linear I–V characteristics. However, oxidizing the contacts at 450 and 550 °C for 1 min in air results in a dramatic improvement in their I–V behaviors, producing specific contact resistance of ∼10[sup -6] Ω cm[sup 2], which is much better than the conventional oxidized Ni/Au contacts. The light transmittance of the Ni–Mg solid solution/Au contacts annealed at 550 °C is measured to be better than 79% at a wavelength of 460 nm. Based on the I–V measurements, Auger electron spectroscopy, and x-ray photoemission spectroscopy results, possible ohmic formation mechanisms are described. © 2003 American Institute of Physics.
ACCESSION #
11123021

 

Related Articles

  • Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction. Lee, Ching-Ting; Yu, Qing-Xuan; Tang, Bang-Tai; Lee, Hsin-Ying; Hwang, Fu-Tsai // Applied Physics Letters;5/28/2001, Vol. 78 Issue 22, p3412 

    The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 °C, in hydrogen ambient. The measured specific contact resistance was 3x10[sup -4] Ω cm2. Ohmic formation...

  • Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN. Chen, Li-Chien; Li-Chien Chen; Ho, Jin-Kuo; Jin-Kuo Ho; Jong, Charng-Shyang; Charng-Shyang Jong; Chiu, Chien C.; Shih, Kwang-Kuo; Kwang-Kuo Shih; Chen, Fu-Rong; Fu-Rong Chen; Kai, Ji-Jung; Ji-Jung Kai; Chang, Li; Li Chang // Applied Physics Letters;6/19/2000, Vol. 76 Issue 25 

    The Ni/Pt and Ni/Au contacts to p-GaN heat treated in air are investigated to study the effect of the metallic phase of high work function on specific contact resistance (ρ[sub c]). The current-voltage measurement suggests that there is an optimal microstructure for the oxidized Ni/Au contact...

  • Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors. Fitch, R.C.; Gillespie, J.K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; La Roche, J.R.; Ren, F.; Pearton, S.J. // Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1495 

    Measurement of the electrical characteristics of 250 devices on the same 2 in. diameter wafer shows that Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron mobility transistors (HEMTs) have lower average specific contact resistance after annealing at 850 °C for 30 s (4.6×10[sup -5]...

  • Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH[sub 3]CSNH[sub 2] solution. Song, June O; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3129 

    We investigate the effect of CH[sub 3]CSNH[sub 2] solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×10[sup 18] cm[sup -3]). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample....

  • Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Zhou, L.; Lanford, W.; Ping, A. T.; Ping, A.T.; Adesida, I.; Yang, J. W.; Yang, J.W.; Khan, A. // Applied Physics Letters;6/5/2000, Vol. 76 Issue 23 

    Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (N[sub A]=3.0x10[sup 17] cm[sup -3]) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 °C. The best ohmic contacts...

  • Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN. Jang, Ja-Soon; Ja-Soon Jang; Seong, Tae-Yeon; Tae-Yeon Seong // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH[sub 4])[sub 2]S[sub x]. Measurements show that the value of the effective Richardson constant (A[sup **]) is 12 A cm-2 K-2, which is...

  • Low-resistance ohmic contacts to p-type GaN. Li, Y.-L.; Schubert, E. F.; Schubert, E.F.; Graff, J. W.; Graff, J.W.; Osinsky, A.; Schaff, W. F.; Schaff, W.F. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    The specific contact resistance of two types of ohmic contacts to p-type GaN is analyzed. First, an ohmic contact formed by a metal electrode deposited on a highly doped p-type GaN layer. Second, an ohmic contact formed by a metal electrode deposited on a thin GaN layer with an internal electric...

  • Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN. Lin, Yow-Jon; Yow-Jon Lin; Lee, Ching-Ting; Ching-Tee Lee // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0x10[sup -5] Ω cm[sup 2] for the Ti/Al nonalloyed...

  • Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN. Huh, Chul; Kim, Sang-Woo; Kim, Hyun-Min; Kim, Dong-Joon; Park, Seong-Ju // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1942 

    The effects of an alcohol-based (NH[sub 4])[sub 2]S solution [t-C[sub 4]H[sub 9]OH+(NH[sub 4])[sub 2]S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x10[sup -2] to 4.71x10[sup -5] Ω cm[sup 2] as a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics