TITLE

Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe

AUTHOR(S)
Janotti, A.; Su-Huai Wei; Zhang, S.B.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3522
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by combining donor with donor. Using first-principles band structure method, we demonstrated this concept with n-type doping in ZnTe. For example, we find that the Br[sub Te]–Sn[sub Zn] pair has a binding energy of 0.9 eV and a shallow ε(+/0) donor level at 70 meV below the conduction-band minimum, compared to 240 meV for the isolated Br[sub Te] impurity. © 2003 American Institute of Physics.
ACCESSION #
11123018

 

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