Determination of carrier density in Te-doped Bi nanowires

Yu-Ming Lin; Dresselhaus, M.S.
October 2003
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3567
Academic Journal
A promising approach is presented to characterize the carrier density in Te-doped Bi nanowires from their temperature-dependent resistance measurements, based on the comparison of the scattering rates due to charged impurity scattering and due to other scattering mechanisms that are independent of the carrier density. The result shows that the Te doping efficiency δ[sub e] is only about 10%–15% for Te-doped Bi nanowires synthesized in an alumina template by molten-metal pressure injection. This analysis technique can be extended to other nanowire systems to provide valuable information regarding the carrier concentration and the Fermi energy for use in controlling and optimizing nanowire properties for specific applications. © 2003 American Institute of Physics.


Related Articles

  • Effects of a magnetic field on hot electron transport in quantum wires. Telang, N.; Bandyopadhyay, S. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1623 

    Focuses on the effects of a magnetic field on hot electron transport in quantum wires. Performance of the Monte Carlo simulation for electron magnetotransport in a GaAs quantum wire; Increase of electron drift velocity; Reduction of the Johnson noise.

  • Ballistic transport in hot-electron transistors. Xu, Jingming; Shur, Michael // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3816 

    Presents a study which demonstrated that the performance of hot-electron transistors and other ballistic devices can be greatly improved if a focused beam of energetic electrons is injected into the active region of a high-speed device. Estimation of the characteristic length of the ballistic...

  • Consideration of the thermal energy in hydrodynamic transport models. Curow, Matthias // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2063 

    Examines the behavior of hot electron devices using hydrodynamic transport models. Contribution of thermal energy to hydrodynamic transport model; Calculation of the electron transport parameters; Role of the electric field in potential energy estimation; Reliability and differences of the model.

  • Ballistic electron transport across collector barriers in AlGaAs/GaAs hot-electron transistors. Kuzuhara, M.; Kim, K.; Arnold, D.; Hess, K. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1252 

    A Monte Carlo calculation has been performed to simulate the experiment of Heiblum and co-workers [Phys. Rev. Lett. 55, 2200 (1985)], regarding ballistic electron transport and the electron transit time across the AlGaAs collector barrier region in AlGaAs/GaAs tunneling hot-electron transfer...

  • Optical absorption and carrier-induced bleaching effect in quantum wire and quantum box structures. Sakaki, Hiroyuki; Kato, Keishi; Yoshimura, Hisao // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2800 

    The optical absorption spectra of quantum wires and boxes are studied theoretically to evaluate the carrier-induced bleaching effect. It is found that the absorption coefficients of these highly confined systems (HCSs) and their changes with the introduction of carriers can be far greater than...

  • Lateral transport of hot electrons on a spherical target by 10.6-μm CO2 laser irradiation. Terai, K.; Daido, H.; Fujita, M.; Miki, F.; Nakai, S.; Yamanaka, C. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p355 

    Lateral transport of hot electrons on a spherical target irradiated with two beams of CO[sub 2] laser {4.8 X 10TM W/cm2} iS studied by spatially resolved Kcr x-ray measurements. The hot-electron energy and spatial distribution in the target are found to depend on the method of irradiation: tight...

  • Extreme nonequilibrium electron transport in heterojunction bipolar transistors. Berthold, K.; Levi, A. F. J.; Walker, J.; Malik, R. J. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2247 

    We use hot-electron spectroscopy to demonstrate the existence of extreme nonequilibrium electron transport in the base of n-p-n heterojunction bipolar transistors. In the device, electrons are tunnel injected into a thin (∼300 Å wide), degenerately doped, p-type GaAs base.

  • Hot-carrier effect on current transport in epitaxial YBa[sub 2]Cu[sub 3]O[sub y] thin films. Matsui, Ken-ichi; Sakuta, Ken // Applied Physics Letters;1/13/1992, Vol. 60 Issue 2, p243 

    Observes the hot-carrier effect on current transport in epitaxial YBa[sub 2]Cu[sub 3]O[sub y] thin films. Exhibition of superconducting phase nonlinearity at low temperatures; Relationship between carrier concentration and mobility; Correlation between the value of E[sub th] and temperature.

  • InGaAs/InP hot electron transistors grown by chemical beam epitaxy. Chen, W.L.; Sun, J.P. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p189 

    Investigates the direct current performance of chemical beam epitaxy grown indium gallium arsenide and indium phosphide hot electron transistors (HET). Demonstration of the ballistic transport of electrons; Value of the measured HET conduction band discontinuity; Presence of a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics