TITLE

Determination of carrier density in Te-doped Bi nanowires

AUTHOR(S)
Yu-Ming Lin; Dresselhaus, M.S.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3567
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A promising approach is presented to characterize the carrier density in Te-doped Bi nanowires from their temperature-dependent resistance measurements, based on the comparison of the scattering rates due to charged impurity scattering and due to other scattering mechanisms that are independent of the carrier density. The result shows that the Te doping efficiency δ[sub e] is only about 10%–15% for Te-doped Bi nanowires synthesized in an alumina template by molten-metal pressure injection. This analysis technique can be extended to other nanowire systems to provide valuable information regarding the carrier concentration and the Fermi energy for use in controlling and optimizing nanowire properties for specific applications. © 2003 American Institute of Physics.
ACCESSION #
11123003

 

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