TITLE

Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots

AUTHOR(S)
Engström, O.; Malmkvist, M.; Fu, Y.; Olafsson, H.Ö.; Sveinbjörnsson, E.Ö.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3578
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal emission of electrons from self-assembled InAs/GaAs quantum dots, prepared by molecular-beam epitaxy, with an average base/height size of 20 nm/11 nm in Schottky diodes has been investigated using deep level transient spectroscopy (DLTS). By applying an appropriate set of voltage pulses across the Schottky diode, the two different s-electron configurations have been investigated separately. This avoids the problem of interference between overlapping peaks in DLTS data. We find that a difference in activation energy for the thermal electron emission between the two configurations agrees with expected variation in electron energy levels due to the size distribution of the quantum dots. © 2003 American Institute of Physics.
ACCESSION #
11122999

 

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