Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN[sub x] interlayer in n-GaN layers

Ru-Chin Tu; Chang-Cheng Chuo; Shyi-Ming Pan, M.; Yu-Mei Fan, M.; Ching-En Tsai; Te-Chung Wang; Chun-Ju Tun; Gou-Chung Chi; Bing-Chi Lee, M.; Chien-Ping Lee
October 2003
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3608
Academic Journal
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiN[sub x] interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epitaxy. Inserting the SiN[sub x] interlayer into the n-GaN underlying layer slightly reduced leakage current induced by reducing the defect density. Additionally, an enhancement of light extraction for the LED with a SiN[sub x] interlayer is expected because of the increased intensity of light scattered on the SiN[sub x] nanomask, changing the directions of propagation of light. Consequently, the emission efficiency of an LED with an in situ rough SiN[sub x] interlayer doubles that without a SiN[sub x] interlayer. © 2003 American Institute of Physics.


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