TITLE

Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

AUTHOR(S)
Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Humphreys, C.J.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3626
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on the paper 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam-epitaxy,' by Akihiko Kikuchi and colleagues, which appeared in a 2002 issue of the journal 'Applied Physics Letters.' Sensitivity of current-voltage characteristics to the way of voltage sweep; Hysteresis and absence of any peak in the voltage sweeps from negative to positive bias.
ACCESSION #
11122983

 

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