Activation and diffusion studies of ion-implanted p and n dopants in germanium

Chi On Chui; Gopalakrishnan, Kailash; Griffin, Peter B.; Plummer, James D.; Saraswat, Krishna C.
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3275
Academic Journal
We have demonstrated symmetrically high levels of electrical activation of both p- and n-type dopants in germanium. Rapid thermal annealing of various commonly implanted dopant species were performed in the temperature range of 600–850 °C in germanium substrates. Diffusion studies were also carried out by using different anneal times and temperatures. T-SUPREM™ simulations were used to fit the experimental profiles and to extract the diffusion coefficient of various dopants. © 2003 American Institute of Physics.


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