Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

Gruber, Th.; Kirchner, C.; Kling, R.; Reuss, F.; Waag, A.; Bertram, F.; Forster, D.; Christen, J.; Schreck, M.
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3290
Academic Journal
The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn[sub 1-x]Cd[sub x]O allows reduction of the band gap relative to ZnO, which would be necessary for devices emitting visible light. We have analyzed the structural and optical properties of Zn[sub 1-x]Cd[sub x]O layers grown by metalorganic vapor-phase epitaxy. A narrowing of the fundamental band gap of up to 300 meV has been observed, while introducing a lattice mismatch of only 0.5% with respect to binary ZnO. Photoluminescence, high-resolution x-ray diffraction, and spatially resolved cathodoluminescence measurements revealed a lateral distribution of two different cadmium concentrations within the Zn[sub 1-x]Cd[sub x]O layers. © 2003 American Institute of Physics.


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