151 kA/cm[sup 2] peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

Niu Jin; Sung-Yong Chung; Rice, Anthony T.; Berger, Paul R.; Ronghua Yu, Paul R.; Thompson, Phillip F.; Lake, Roger
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3308
Academic Journal
Room-temperature I–V characteristics of epitaxially grown Si/SiGe resonant interband tunneling diodes (RITDs) with extremely high peak current densities are presented. By optimizing the physical design, doping concentrations, and post-growth anneal temperatures, RITDs having peak current densities over 150 kA/cm[sup 2], peak-to-valley current ratios (PVCRs) greater than 2, and an estimated speed index of 34 mV/ps have been obtained. The interplay among the conditions to achieve maximum current density and highest PVCR is discussed. This result demonstrates the high potential of this type of Si-based tunnel diode for high-power mixed-signal applications. © 2003 American Institute of Physics.


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