TITLE

151 kA/cm[sup 2] peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

AUTHOR(S)
Niu Jin; Sung-Yong Chung; Rice, Anthony T.; Berger, Paul R.; Ronghua Yu, Paul R.; Thompson, Phillip F.; Lake, Roger
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature I–V characteristics of epitaxially grown Si/SiGe resonant interband tunneling diodes (RITDs) with extremely high peak current densities are presented. By optimizing the physical design, doping concentrations, and post-growth anneal temperatures, RITDs having peak current densities over 150 kA/cm[sup 2], peak-to-valley current ratios (PVCRs) greater than 2, and an estimated speed index of 34 mV/ps have been obtained. The interplay among the conditions to achieve maximum current density and highest PVCR is discussed. This result demonstrates the high potential of this type of Si-based tunnel diode for high-power mixed-signal applications. © 2003 American Institute of Physics.
ACCESSION #
11097797

 

Related Articles

  • Evolution of Ge islands on Si(001) during annealing. Kamins, T. I.; Medeiros-Ribeiro, G. // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p1159 

    Presents information on a study which focused on the evolution of the shape and size distribution of germanium (Ge) islands on silicon(001) during annealing. Background information on Ge island size and shape evolution; Sample preparation, measurement and data-analysis techniques; Experimental...

  • Folded phonon spectra of progressively annealed amorphous Si/Ge superlattices. Kumar, Sunil; Trodahl, H. J. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p508 

    Studies the folded phonon spectra of progressively annealed amorphous silicon/germanium superlattices. Applications of amorphous semiconductor superlattices; Preparation of the samples; Derivation of the Raman spectra.

  • Origin of charge trapping in germanium nanocrystal embedded SiO[sub 2] system: Role of interfacial traps? Kan, E. W. H.; Choi, W. K.; Chim, W. K.; Fitzgerald, E. A.; Antoniadis, D. A. // Journal of Applied Physics;3/15/2004, Vol. 95 Issue 6, p3148 

    Wet thermal oxidations of polycrystalline Si[sub 0.54]Ge[sub 0.46] films at 600 °C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide with Ge nanocrystallites embedded in the oxide...

  • Germanium effect on oxygen precipitation in Czochralski silicon. Hong Li; Deren Yang; Xiangyang Ma; Xuegong Yu; Duanlin Que // Journal of Applied Physics;10/15/2004, Vol. 96 Issue 8, p4161 

    The oxygen precipitation in germanium-doped Czochralski (GCZ) silicon has been investigated. After a prolonged annealing at 800 and 1000°C, it was found that the Ge-doping enhanced the formation of oxygen precipitates with a higher density and modified their morphology and size. Furthermore,...

  • Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructure. Swain, P. K.; Misra, D.; Thompson, P. E. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4402 

    Provides information on a study which examined the effect of the exposure to dry etching of strained silicon germanium films. Details of the annealing behavior of defects generated as a consequence of dry etching; Size of the dislocation loops.

  • Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide. DiLello, Nicole A.; Hoyt, Judy L. // Applied Physics Letters;7/18/2011, Vol. 99 Issue 3, p033508 

    Ge-on-Si photodiodes were fabricated from epitaxial germanium films grown by low-pressure chemical vapor deposition. These vertical p-i-n diodes were passivated with SiO2 deposited by chemical vapor deposition. It is found that the incorporation of a post-metallization anneal reduces the dark...

  • Effect of deposition conditions of poly Si[sub 1-x]Ge[sub x] films and Ge atoms on the electrical properties of poly Si[sub 1-x]Ge[sub x] (x=0,0.6)/HfO[sub 2] gate stack. Sung Kwan Kang; Suheun Nam; Byoung Gi Mm; Seok Woo Nam; Dae-hong Ko; Mann-Ho Cho // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4608 

    The effect of interfacial reactions at the poly Si[sub 1-x]Ge[sub x]/HfO[sub 2] interface on the electrical properties of metal–oxide–semiconductor (MOS) capacitors with a poly Si[sub 1-x]Ge[sub x] (x=0,0.6)/HfO[sub 2] gate stack was investigated relative to the deposition...

  • Effect of silicon and germanium on the structure and properties of cast high-speed steel. Chaus, A. // Metal Science & Heat Treatment;Jan2009, Vol. 51 Issue 1/2, p33 

    The effect of silicon and germanium additives on the structure and properties of cast cobalt tungsten-molybdenum high-speed steel of type R6M5K5 is studied. Results of metallographic and x-ray diffraction analyses of experimental steels after casting, annealing, quenching, and tempering are...

  • Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing. Choi, W. K.; Ho, V.; Ng, V.; Ho, Y. W.; Ng, S. P.; Chim, W. K. // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143114 

    The effect of rapid thermal annealing temperature on the diffusion of silicon (Si) and germanium (Ge) and the formation of Ge nanocrystals in a silicon oxide matrix was investigated. The formation of Ge nanocrystals was attributed mainly to the reduction of Ge suboxides by Si diffused from the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics