Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence

Anikeev, S.; Donetsky, D.; Belenky, G.; Luryi, S.; Wang, C. A.; Borrego, J. M.; Nichols, G.
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3317
Academic Journal
Auger recombination in p-type GaSb, InAs, and their alloys is enhanced due to the proximity of the band gap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. We report electron lifetime measurements in a p-type 0.54 eV GaInAsSb alloy, commonly used in a variety of infrared devices. We have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3×10[sup -28] cm[sup 6]/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms. © 2003 American Institute of Physics.


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