Growth, branching, and kinking of molecular-beam epitaxial <110> GaAs nanowires

Wu, Z.H.; Mei, X.; Kim, D.; Blumin, M.; Ruda, H.F.; Liu, J.0.; Kavanagh, K.L.
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3368
Academic Journal
GaAs nanowires were grown on GaAs (100) substrates by vapor–liquid–solid growth. About 8% of these nanowires grew in <110> directions with straight, Y-branched or L-shaped morphologies. The role of strain-induced reduction in surface free energy is discussed as a possible factor contributing to the evolution of <110> nanowires. Kinking and branching is attributed to growth instabilities resulting from equivalent surface free energies for <110> growth directions. Transmission electron microscopy verified that <110> nanowires are defect free. © 2003 American Institute of Physics.


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