Tunable, narrow-band light emission from size-selected Si nanoparticles produced by pulsed-laser ablation

Orii, Takaaki; Hirasawa, Makoto; Seto, Takafumi
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3395
Academic Journal
We have demonstrated narrow-band visible light emission from size selected silicon nanoparticles (np-Si), with a wavelength controlled by size tuning. The np-Si were synthesized by pulsed-laser ablation of a silicon single-crystal target in high-purity He background gas. A postannealing process improved morphology and crystallinity. Using a differential mobility analyzer, nanoparticles were classified with a diameter tunable from 3 to 6 nm. Monodispersed np-Si deposited on substrate exhibited a sharp photoluminescence band. The energy of this band increased from 1.34 to 1.79 eV with decrease in particle size, and narrowed to approximately 0.22 eV full width at half maximum due to highly resolved size-selection and improvement in crystallinity. The results suggest that tunable, narrow-band light emitting np-Si produced by gas phase synthesis have good possibilities for application as optoelectronic devices. © 2003 American Institute of Physics.


Related Articles

  • Synthesis of ZnO Nanowire Heterostructures by Laser Ablation and Their Photoluminescence. Nakamura, Daisuke; Matsumoto, Takafumi; Kumeda, Akio; Toya, Kazuyuki; Okazaki, Kota; Higashihata, Mitsuhiro; Okada, Tatsuo // Journal of Laser Micro / Nanoengineering;2011, Vol. 6 Issue 1, p23 

    ZnO nano-crystals have been paid a great attention as building blocks for the optoelectronic devices, such as an UV-LED. We have been succeeded in growing ZnO nanostructures, such as vertically-aligned ZnO nanowires and nanowalls, by a newly developed nanoparticle-assisted pulsed-laser...

  • Formation dynamics of silicon nanoparticles after laser ablation studied using plasma emission caused by second-laser decomposition. Makimura, Tetsuya; Mizuta, Taiji; Murakami, Kouichi // Applied Physics Letters;3/13/2000, Vol. 76 Issue 11 

    We have investigated the dynamic formation of silicon nanoparticles after pulsed-laser ablation of a silicon target into argon gas, in order to fabricate the nanoparticles that exhibit visible photoluminescence with higher efficiency. The nanoparticles growing in argon gas were detected by...

  • Effect of annealing on photoluminescent properties of titanium dioxide nanoparticles. Pugachevsky, M. // Journal of Applied Spectroscopy;Nov2012, Vol. 79 Issue 5, p834 

    The luminescent properties of titanium dioxide nanoparticles obtained by laser ablation have been determined. The position of the luminescence peaks is shown to depend on the excitation wavelength. The luminescence peaks are assigned to certain types of defects in the nanoparticles. The effect...

  • Study the Effect of CO2 Laser Annealing on Silicon Nanostructures. Abed, Au L.; Rasheed, Bassam G. // Modern Applied Science;Dec2010, Vol. 4 Issue 12, p56 

    The recent discovery of strong room-temperature photoluminescence from silicon nanocrystals fabricated by different methods is an extremely important scientific breakthrough with enormous technological implications because of possibility of integration of silicon based electronic and...

  • Annealing effects on structures and optical properties of silicon nanostructured films prepared by pulsed-laser ablation in inert background gas. Makino, Toshiharu; Yamada, Yuka; Suzuki, Nobuyasu; Yoshida, Takehito; Onari, Seinosuke // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5075 

    We studied the annealing effects on the structures and optical properties of silicon (Si) nanostructured films. The Si nanostructured films were synthesized by pulsed-laser ablation in inert background gas. It was found that the Si nanostructured films partially include an amorphous-like...

  • Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles. Debieu, O.; Bréard, D.; Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Labbé, C.; Cardin, J.; Gourbilleau, F. // Journal of Applied Physics;Dec2010, Vol. 108 Issue 11, p113114 

    We report on the microstructure and photoluminescence (PL) properties of Nd-doped SiO2 thin films containing silicon nanoparticles (Si-np) as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering,...

  • Effect of insitu annealing on physical properties of Si nanoparticles synthesized by pulsed laser ablation. Hirasawa, M.; Orii, T.; Seto, T. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 4-6, p1421 

    Silicon nanocrystalline particles with a uniform size were successfully synthesized by a sequential system of pulsed-laser ablation, insitu annealing and a size classification using a differential mobility analyzer (DMA). Transmission electron microscopy (TEM) observations revealed that the...

  • Optical properties of porous silicon processed in tetraethyl orthosilicate. Len'shin, A.; Kashkarov, V.; Tsipenyuk, V.; Seredin, P.; Agapov, B.; Minakov, D.; Domashevskaya, E. // Technical Physics;Feb2013, Vol. 58 Issue 2, p284 

    We investigate the change in the composition and optical properties of porous silicon (por-Si) obtained by electrochemical etching of a palate made of n-type (111) silicon single crystal under high-temperature annealing and processing in tetraethyl orthosilicate (TEOS). It is shown that TEOS...

  • Photoluminescence study of the Si-implanted and rapid thermal annealed InP:Fe. Rao, Mulpuri V. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p337 

    Presents a study which examined the use of low-temperature photoluminescence for silicon-implanted and rapid thermal annealed InP:Fe. Efficiency of the photoluminescence as a measurement technique; Details on experimentations; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics