Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

Zhong, J.; Muthukumar, S.; Chen, Y.; Lu, Y.; Ng, H.M.; Jiang, W.; Garfunkel, F.L.
October 2003
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3401
Academic Journal
In situ Ga-doped ZnO nanotips were grown on amorphous fused silica substrates using metalorganic chemical vapor deposition. Structural, optical, and electrical properties of as-grown ZnO nanotips are investigated. Despite the amorphous nature of fused silica substrates, Ga-doped ZnO nanotips are found to be single crystalline and oriented along the c-axis. Photoluminescence (PL) spectra of Ga-doped ZnO nanotips are dominated by near-band-edge emission with negligible deep-level emission. The increase in PL intensity from Ga doping has been attributed to the increase of Ga donor-related impurity emission. Current–voltage characteristics of the ZnO nanotips are measured by conductive-tip atomic force microscopy, which shows the conductivity enhancement due to Ga doping. © 2003 American Institute of Physics.


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