TITLE

Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

AUTHOR(S)
Kang, A.Y.; Lenahan, P.M.; Conley Jr, J.F
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3407
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We observed two paramagnetic defects in thin films of HfO[sub 2] on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O[sub 2][sup -] defect. A second spectrum is likely due to an Hf[sup +3] related defect. © 2003 American Institute of Physics.
ACCESSION #
11097764

 

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