TITLE

Enhanced adhesion and performance of the source/drain electrode using a single-layered Ag(Cu) film for an amorphous silicon thin-film transistor

AUTHOR(S)
Hong, S.J.; Lee, S.; Park, J.B.; Yang, H.J.; Ko, Y.K.; Lee, J.G.; Cho, B.S.; Jeong, C.O.; Chung, K.H.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3419
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The feasibility of using a Ag(Cu) alloy film as a source/drain electrode for thin-film transistor (TFT) liquid-crystal displays has been investigated. The annealing of a Ag(Cu)/Si structure, for 30 min at 200 °C, produced a uniform Cu[sub 3]Si layer at the Ag(Cu)–Si interface, as a result of the reaction of the segregated Cu with Si. This lowered the resistivity from 5.3 to 3.2 μΩ cm, which also led to improved adhesion properties. A hydrogenated amorphous silicon (a-Si:H) TFT was fabricated using a single layer of Ag (19 at. % Cu) alloy film as the source/drain metal. The subthreshold slope, mobility, and threshold voltage obtained from the fabricated a-Si:H TFT were 0.78 V/dec, 0.79 cm[sup 2]/V s, and 2 V, respectively, revealing a reduction in the process steps, with excellent performance. © 2003 American Institute of Physics.
ACCESSION #
11097760

 

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