TITLE

Machining Technology of Ultrasonic Assisted Grinding for a Silicon Carbide Wafer Carrier

AUTHOR(S)
Chia-Jen Ting; Chi-Feng Chen; Ta-Hsin Chou; Tsung-Cho Wu; Tsung-Hsin Lin
PUB. DATE
May 2015
SOURCE
Advanced Materials Research;2015, Vol. 806, p371
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The machining technology of ultrasonic assisted ductile mode grinding for the silicon carbide (SiC) wafer carrier. The machining tool is designed and analyzed by ANASYS 14.0 and the machining technology is studied for the 6-inch SiC wafer carrier. The ultrasonic tool holder with the resonance frequency 26 kHz is designed and fabricated. The advantageous machining parameters are proposed that spindle rotation rate is 3000 rpm, feed speed is 200 mm/min, and ultrasonic output power is 250 W. The measurement results show that the average roughness (Ra) of the SiC is 0.18 µm, the MRR is over 2.4 mm³/min, the tool tips are only minor abrasion, and the cutting temperature are reduced. Obvious, the machining technology has the advantage of high surface quality, high machining efficiency and long tool life.
ACCESSION #
110788071

 

Related Articles

  • Machining Technology of Ultrasonic Assisted Grinding for a Silicon Carbide Wafer Carrier. Chia-Jen Ting; Chi-Feng Chen; Ta-Hsin Chou; Tsung-Cho Wu; Tsung-Hsin Lin // Advanced Materials Research;2016, Vol. 1136, p371 

    The machining technology of ultrasonic assisted ductile mode grinding for the silicon carbide (SiC) wafer carrier. The machining tool is designed and analyzed by ANASYS 14.0 and the machining technology is studied for the 6-inch SiC wafer carrier. The ultrasonic tool holder with the resonance...

  • Controlling the surface roughness of epitaxial SiC on silicon. Mishra, N.; Hold, L.; Iacopi, A.; Gupta, B.; Motta, N.; Iacopi, F. // Journal of Applied Physics;2014, Vol. 115 Issue 20, p203501-1 

    The surface of cubic silicon carbide (3C-SiC) hetero-epitaxial films grown on the (111) surface of silicon is a promising template for the subsequent epitaxial growth of III-V semiconductor layers and graphene. We investigate growth and post-growth approaches for controlling the surface...

  • TESTING OF GRINDING WHEELS FOR TOOLS MANUFACTURING. Rokyta, Lubos // Annals of DAAAM & Proceedings;Jan2011, p1137 

    The paper deals with influence of technological conditions on roughness during grinding. It evaluates copying surface of the cavity of injection mould to the surface of the part. Experiments were realized on a flat grinding machine at normal cutting speed. Surface-roughness measuring was made...

  • Study on Sapphire Wafer Grinding by Chromium Oxide (Cr2O3) Wheel. Ke Wu; Naoki Yamazaki; Yutaro Ebina; Libo Zhou; Jun Shimizu; Teppei Onuki; Hirotaka Ojima; Takashi Fujiwara // Advanced Materials Research;2016, Vol. 1136, p311 

    Finishing process of sapphire wafer is meeting huge challenge to fulfill the strict requirement of high surface quality in semiconductor industry. Fixed abrasive process, although can guarantee the profile accuracy, leaves damaged layer on the surface or subsurface of sapphire wafer. Chemical...

  • Experimental Study on Rotary Ultrasonic Machining of SiCp/Al Composite. Ming Wang; Guojun Dong; Ming Zhou // Key Engineering Materials;2014, Vol. 589/590, p529 

    The performances of particle reinforced aluminum matrix composite is excellent, but it is hard to be manufactured, which resist its wide spread engineering application. Rotary ultrasonic machining (RUM) is very suit for machining of particle reinforced aluminum matrix composite with moderate or...

  • Surface integrity of AlSiC composites ground by monolayer brazed diamond wheels. ZHANG Fenglin; LIU Peng; WANG Peng; ZHOU Yumei; HUANG Huiping; LU Jiabin // Advanced Materials Research;2015, Vol. 806, p526 

    Monolayer brazed diamond wheel were used to grind AlSiC composite with different volume fraction of SiC. The effects of diamond mesh size of the grinding wheels and the volume fraction of SiC in AlSiC composite on the surface integrity of ground AlSiC composite were investigated. It is found...

  • Lapping assisted dissolved wafer process of silicon for MEMS structures. Dutta, Shankar; Kumar, Manoj; Kumar, Surender; Imran, Md; Yadav, Isha; Kumar, Anand; Kumar, P.; Pal, Ramjay // Journal of Materials Science: Materials in Electronics;Apr2014, Vol. 25 Issue 4, p1984 

    Dissolved wafer process (DWP) is being extensively used to fabricate complex micro-electro-mechanical system (MEMS) structures. Etching non-uniformity, increased surface roughness and duration of DWP is often influence MEMS devices yields. This paper presents a modified DWP involving lapping and...

  • Analysis of the behavior of grinding wheels in surface grinding. Fernández, R.; Iriarte, A.; Puerto, P.; Gallego, I.; Arrazola, P. J. // AIP Conference Proceedings;4/30/2012, Vol. 1431 Issue 1, p374 

    Grinding is a machining process in which metal removal takes place through the action on the workpiece of hard abrasive particles which are attached to the grinding wheel by a bond. The abrasive grains are sharp and irregular tiny particles with several cutting edges. The material removed from...

  • Forces during Grinding Operation and its Relation to the Dressing Cycle. NAMBIAR, Anand; Kou MATSUMOTO; Masaru YAMAMOTO; Kazuhito OHASHI; Shinya TSUKAMOTO // Advanced Materials Research;2016, Vol. 1136, p78 

    While grinding with CNC cylindrical grinding machines, there are many factors that determine the precision and accuracy of the finished product. These may include dimensional accuracy, surface roughness, circularity (roundness), cylindricity, etc. But all these factors pertain to the work. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics