TITLE

Effect of Citric Acid in Chemical Mechanical Polishing (CMP) for Lithium Tantalate (LiTaO3) Wafer

AUTHOR(S)
Hyunseop Lee
PUB. DATE
May 2015
SOURCE
Advanced Materials Research;2015, Vol. 806, p305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lithium tantalate (LiTaO3) has piezoelectric, electro-optical and nonlinear optical characteristics, and a wide transparency range going from ultraviolet to infrared. It is desirable that LiTaO3 wafer was a smooth surface in order to function with good quality. Chemical mechanical polishing (CMP) has been used to planarize integrated circuits (ICs) or obtain a high surface quality of the substrates. This paper investigates the effect of citric acid as an additive in the slurry for LiTaO3 CMP. The roughness of the wafers was measured by an atomic force microscopy (AFM, XE-100) after polishing. The slurry, which contains citric acid as an additive, has a higher material removal rate and friction force than a slurry without an additive. After polishing, the surface roughness of the LiTaO3 wafer can be reduced down to 1.7Ã… of Ra.
ACCESSION #
110788060

 

Related Articles

  • Effect of Citric Acid in Chemical Mechanical Polishing (CMP) for Lithium Tantalate (LiTaO3) Wafer. Hyunseop Lee // Advanced Materials Research;2016, Vol. 1136, p305 

    Lithium tantalate (LiTaO3) has piezoelectric, electro-optical and nonlinear optical characteristics, and a wide transparency range going from ultraviolet to infrared. It is desirable that LiTaO3 wafer was a smooth surface in order to function with good quality. Chemical mechanical polishing...

  • Quantitative evaluation of elastic properties of LiTaO[sub 3] crystals by line-focus-beam... Kushibiki, J.; Takahashi, H.; Kobayashi, T.; Chubachi, N. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p893 

    Investigates the elastic properties of lithium tantalate (LiTaO[sub 3]) using the line-focus-beam acoustic microscope system. Detection of elastic inhomogeneities as a significant variation of leaky surface acoustic wave velocities in lithium tantalate wafers; Difference between the velocities...

  • Fab Followers? Not Anymore. Moore, Wayne // Electronic News;11/13/2000, Vol. 46 Issue 46, p58 

    Deals with the changes in semiconductor wafer plants of the integrated circuit packaging industry. Description of a semiconductor wafer plant; Comment on people working in a semiconductor wafer plant.

  • Thin is in: Wafer-thinning method delivers ultra-slim chips with a clean process. Bursky // Electronic Design;09/07/99, Vol. 47 Issue 18, p27 

    Focuses on wafer-thinning method that delivers ultra-slim integrated circuits. Tru-Sci Technology Inc.'s Tru-Etch scheme; Use of airflow techniques; Decomposition of injected reactant gases.

  • Laser wafer marking tracks IC production. Wallace, John // Laser Focus World;Feb99, Vol. 35 Issue 2, p75 

    Provides information on the significance of laser wafer marking on semiconductor integrated chips (IC) production. Description of a typical wafer-marking system; Capabilities of the laser wafer marking; Improvements and developments in IC makers.

  • Identification and cleaning effect of active intermediates in the O3/ultraviolet ray/supersonic wave multiple reaction using a low-temperature sprayed TiO2 photocatalyst. Seiichi Ishikawa; Sen Li; Chen Huang; Teiji Tanizaki; Wenhao Zhang; Tomohiko Higuchi; Hisato Haraga // Sustainable Environment Research;2015, Vol. 25 Issue 6, p323 

    Water for cleaning wafers intended for integrated circuit (IC) fabrication was produced using a combination of ozone (O3), ultra-violet ray (UVR), super-sonic wave (SSW) and a TiO2 photocatalyst deposited on quartz glass by low-temperature spraying. Using both UVR and SSW led to a decrease in...

  • Contactless optical evaluation of processing effects on carrier lifetime in silicon. Baude, P. F.; Tamagawa, T.; Polla, D. L. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2579 

    Contactless, optical modulation of free-carrier absorption has been used to identify minority-carrier lifetime degradation associated with both novel and common very large scale integrated circuit processing steps in p-type silicon wafers. Carrier lifetime degradation and a corresponding...

  • 300mm tool ramp on track, says Applied's Maydan.  // Solid State Technology;Sep2002, Vol. 45 Issue 9, p20 

    Reports on the transition from 200 to 300mm semiconductor wafer fabrication to cover high developmental costs. Problems encountered in the transition; Shrinking depth-of-focus latitude in lithography; Management of fabrication lines using software; Consumerization of the chip industry; Impact...

  • Understanding and controlling wafer charging damage. Lukaszek, Wes // Solid State Technology;Jun98, Vol. 41 Issue 6, p101 

    Discusses wafer charging damage, a problem in integrated circuit manufacturing. Misconception on the cause of the device damage; How to predict device damage; Possible solutions to the problem. INSET: How CHARM-2 quantifies wafer charging.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics