Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range

Egorov, A.; Karachinsky, L.; Novikov, I.; Babichev, A.; Nevedomskiy, V.; Bugrov, V.
November 2015
Semiconductors;Nov2015, Vol. 49 Issue 11, p1522
Academic Journal
Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs-InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of InGaAs with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.


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