TITLE

Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

AUTHOR(S)
Ruixiang Fei; Wenbin Li; Ju Li; Li Yang
PUB. DATE
October 2015
SOURCE
Applied Physics Letters;10/26/2015, Vol. 107 Issue 17, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" C2v symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.
ACCESSION #
110667308

 

Related Articles

  • Small clusters of aluminum and tin: Highly correlated calculations and validation of density functional procedures. Drebov, Nedko; Ahlrichs, Reinhart // Journal of Chemical Physics;3/28/2011, Vol. 134 Issue 12, p124308 

    We present results of molecular electronic structure treatments of multireference configuration interaction (MRCI) type for clusters Aln and Snn in the range up to n = 4, and of coupled cluster singles and doubles with perturbative triples corrections (CCSD(T)) type in the range up to n = 10....

  • Theoretical spectrum of AlN. Langhoff, Stephen R.; Bauschlicher, Charles W.; Pettersson, Lars G. M. // Journal of Chemical Physics;12/15/1988, Vol. 89 Issue 12, p7354 

    The electronic states of AlN with excitation energies below about 35 000 cm-1 have been studied at the CASSCF and MRCI levels of theory. Less elaborate calculations have been performed for the low-lying states of AlN+. Although the results are not definitive, they strongly suggest a 3Π ground...

  • Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2. Yuan, H. T.; Toh, M.; Morimoto, K.; Tan, W.; Wei, F.; Shimotani, H.; Kloc, Ch.; Iwasa, Y. // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p012102 

    With ionic liquid (IL) gating in electric-double-layer transistors (EDLTs), we report field effect operation and electronic state modulation in a layered material of SnS2, demonstrating that the EDLT is applicable to modifying the electronic properties of metal dichalcogenides. The IL-gated SnS2...

  • Phase-matched frequency doubling in an aluminum nitride waveguide with a tunable laser source. Blanc, D.; Bouchoux, A.M. // Applied Physics Letters;2/6/1995, Vol. 66 Issue 6, p659 

    Analyzes the frequency doubling observed in an aluminum nitride (AlN) waveguide using a tunable laser source. Relevance of wavelength tuning on phase-matching conditions; Details on harmonic generation efficiency; Description of the structure and piezoelectric properties of AlN.

  • Piezoelectric coefficient of aluminum nitride and gallium nitride. Lueng, C. M.; Chan, H. L. W.; Surya, C.; Choy, C. L. // Journal of Applied Physics;11/1/2000, Vol. 88 Issue 9, p5360 

    Studies the piezoelectric coefficient of aluminum nitride and gallium nitride thin films grown on silicon substrates by molecular beam epitaxy. Use of a laser interferometer; Hexagonal wurtzite structure of thin films; Relative permittivity and electrical resistivity of each constituent layer...

  • Piezoresistive effect in GaN--AlN--GaN structures. Gaska, R.; Yang, J.W. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3817 

    Investigates the effect of piezoelectric properties in gallium nitride (GaN)-aluminum nitride (AlN)-GaN semiconductors with AlN thin films. Comparison of gauge factor of AlN with silicon carbide thin films; Relationship between electron sheet concentration in GaN layers and compressive strain;...

  • Aluminum Nitride In The Offing For Acoustic Sensing. Allan, Roger // Electronic Design;4/1/2002, Vol. 50 Issue 7, p27 

    Explores the use of aluminum nitride (AlN) as a piezoelectric material for acoustic sensing. Laser micromachining of AlN; Surface transwave and surface acoustic-wave detection capability of AlN; Properties of AIN making it suitable for biochemical sensing applications.

  • Extensional piezoelectric coefficients of gallium nitride and aluminum nitride. Guy, I.L.; Muensit, S.; Goldys, E.M. // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4133 

    Features the measurements of piezoelectric coefficients d[sub 33] and d[sub 31] in wurtzite gallium arsenide (GaN) and aluminum nitride (AlN) using an interferometric technique. Clamped values of the coefficients found in GaN and AlN thin films; Respective bulk values.

  • Piezoresistive effect in AIN/GaN short range superlattice structures. Gaska, R.; Shur, M.S. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6932 

    Reports on a strong piezoresistive effect in aluminum nitride (AlN)-gallium nitride (GaN) short-range superlattices. Correlation between the increase in the gauge factor (GF) and the increase in aluminum content; Dynamic and static piezoresistive effect in n-type GaN layers; Use of low pressure...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics