Interstitial Carbon in p-Type Copper-Doped Silicon

Yarykin, Nikolai; Weber, Jörg
May 2016
Solid State Phenomena;2016, Vol. 242, p302
Academic Journal
The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (Ci), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cui, Ci} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the Ci species.


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