In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

Zheng Zuo; Zhongguang Xu; Renjing Zheng; Khanaki, Alireza; Jian-Guo Zheng; Jianlin Liu
October 2015
Scientific Reports;10/9/2015, p1
Academic Journal
Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.


Related Articles

  • Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon. Dabrowski, J.; Lippert, G.; Schroeder, T.; Lupina, G. // Applied Physics Letters;11/10/2014, Vol. 105 Issue 19, p1 

    Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular...

  • Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy. Zhongguang Xu; Khanaki, Alireza; Hao Tian; Renjing Zheng; Suja, Mohammad; Jian-Guo Zheng; Jianlin Liu // Applied Physics Letters;7/25/2016, Vol. 109 Issue 4, p043110-1 

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable...

  • mind the gap.  // Electronics Letters;7/7/2016, Vol. 52 Issue 14, p1189 

    The article discusses a study presented by the U.S. Naval Research Laboratory on the electrical characterization of epitaxial metal heterostructures and their advantages for solid-state devices. It describes the researchers' use of molecular beam epitaxy to create the heterostructures. It also...

  • GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy. Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Ustinov, V. M.; Mamutin, V. V.; Ivanov, S. V.; Zhmerik, V. N.; Tsatsul’nikov, A. F.; Bedarev, D. A.; Kop’ev, P. S. // Technical Physics Letters;Dec98, Vol. 24 Issue 12, p942 

    Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of...

  • Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe. Luo, H.; Samarth, N. // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1783 

    Studies the molecular beam epitaxy ZnTe/CdSe, a lattice-matched II-VI heterostructure. Quality of epilayers grown on ZnTe buffer layers; Photoluminescence; Optical transmission measurements; Valence-band offsets.

  • Optical and electrical properties of InP/InGaAs grown selectively on SiO[sub 2]-masked InP. Wang, Y.L.; Feygenson, A.; Hamm, R.A.; Ritter, D.; Weiner, J.S.; Temkin, H.; Panish, M.B. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p443 

    Reports on the selective growth of the heterostructures of InGaAs/InP through windows in SiO[sub 2]-masked InP substrates by metalorganic molecular beam epitaxy. Display of high cathdoluminescence efficiency; Observation of a red shift and reduced intensity; Occurrence of anomalous growth.

  • High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a.... Chin, Albert; Martin, Paul; Pin Ho; Ballingall, Jim; Tan-Hua Yu; Mazurowski, John // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1899 

    Examines the molecular beam epitaxy of gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), AlGaAs/GaAs modulation doped heterostructures and a GaAs/indium gallium arsenide/GaAs quantum well. Determination of the electron mobility and sheet density.

  • Photoelectrochemical depth profiling of molecular beam epitaxy grown group III-V heterostructures. Wei, C.; Rajeshwar, K. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1348 

    Presents a depth profiling technique for molecular beam epitaxy grown group III-V heterostructures. Combination of photoelectrochemical layer-by-layer removal with analyses by photocurrent spectroscopy; Illustration of the technique in two types of samples; Simplification of the growth process.

  • Ga[sub 0.47]In[sub 0.53]As multiquantum well heterostructures, confined by pseudoquaternary.... Dotor, M.L.; Huertas, P.; Golmayo, D.; Briones, F. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p891 

    Develops a multiquantum well (MQW) heterostructures by pseudoquarternary short period superlattices lattice-matched to indium phosphide substrate. Growth of the sample by low-temperature atomic layer molecular beam epitaxy; Use of x-ray diffraction for structural quality assessment;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics