TITLE

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

AUTHOR(S)
Binh Tinh Tran; Hideki Hirayama; Noritoshi Maeda; Masafumi Jo; Shiro Toyoda; Norihiko Kamata
PUB. DATE
October 2015
SOURCE
Scientific Reports;10/9/2015, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-density micro-circle patterned Si substrates were successfully fabricated for the direct overgrowth of thick AlN templates by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques. The experimental results show that an 8-µm-thick AlN template was grown at a very high growth rate on the substrates. The AlN template had full widths at half maximum of 0.23° and 0.37° for the (002) and (102) reflection planes in X-ray diffraction rocking curves. Atomic force microscopy and transmission electron microscopy confirmed that the roughness of the surface was low (3.5 nm) and the dislocation density was very low (1.5 x 108 cm-2 (screw), 3.7 x 108 (edge) cm-2).
ACCESSION #
110327886

 

Related Articles

  • High optical and structural quality of GaN epilayers grown on (-201) β-Ga2O3. Muhammed, M. M.; Peres, M.; Yamashita, Y.; Morishima, Y.; Sato, S.; Franco, N.; Lorenz, K.; Kuramata, A.; Roqan, I. S. // Applied Physics Letters;7/28/2014, Vol. 105 Issue 4, p1 

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative...

  • Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates. Meng Wei; Xiaoliang Wang; Xu Pan; Hongling Xiao; Cuimei Wang; Cuibai Yang; Zhanguo Wang // Journal of Materials Science: Materials in Electronics;Aug2011, Vol. 22 Issue 8, p1028 

    Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the...

  • The formation of quantum dot structures in 30-pair InGaN/GaN multiple quantum wells after proper thermal annealing treatment. Lin, Yen-Sheng; Kuo, Ho-Hung; Feng, Shih-Wei // Journal of Materials Science: Materials in Electronics;Oct2012, Vol. 23 Issue 10, p1830 

    This study systematically investigates the relation between strain energy and quantum dot (QD) formation for 30- pair InGaN/GaN multiple quantum wells (QW) by means of atomic force microscopy and high-resolution transmission electron microscopy. The results show that a higher number of quantum...

  • Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots. Benaissa, M.; Vennéguès, P.; Tottereau, O.; Nguyen, L.; Semond, F. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231903 

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with...

  • Role of gross well-width fluctuations in bright, green-emitting single InGaN/GaN quantum well structures. van der Laak, Nicole K.; Oliver, Rachel A.; Kappers, Menno J.; Humphreys, Colin J. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121911 

    Gross well-width fluctuations have been observed by transmission electron microscopy (TEM) in single InGaN/GaN quantum wells (QWs) grown by metal-organic vapor phase epitaxy. Similar thickness variations are observed in commercial, green InGaN/GaN multi-QW light emitting diodes. Atomic force...

  • Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate. Bessolov, V.; Konenkova, E.; Kukushkin, S.; Nikolaev, V.; Osipov, A.; Sharofidinov, Sh.; Shcheglov, M. // Technical Physics Letters;Mar2013, Vol. 39 Issue 3, p274 

    The idea of a new method for growing gallium nitride (GaN) epilayers in semi-polar direction by hydride-chloride vapor-phase epitaxy (HVPE) is disclosed. We propose to use Si(210) substrates with the first buffer layer of silicon carbide (3C-SiC) and the second buffer layer of aluminum nitride...

  • Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111). Zhu, Y. H.; Zhang, J. C.; Chen, Z. T.; Egawa, T. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p124506-1 

    GaN-based light-emitting diodes (LEDs) grown on template of 3C-SiC/Si(111) were demonstrated. The structural properties have been investigated systematically by means of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It is found that the intermediate layer (IL)...

  • Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Johnston, C. F.; Kappers, M. J.; Humphreys, C. J. // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p073102 

    The microstructure of nonpolar, a-plane (11-20) GaN grown on r-plane (1-102) sapphire, using a three dimensional (3D)-two dimensional (2D) growth transition, has been studied at different stages of metal organic vapor phase epitaxy. The microstructure and morphology of GaN islands formed at the...

  • Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask. Chakraborty, Arpan; Kim, K. C.; Wu, F.; Speck, J. S.; DenBaars, S. P.; Mishra, U. K. // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p041903 

    We report on the use of in-situ SiNx nanomask for defect reduction in nonpolar a-plane GaN films, grown by metal-organic chemical vapor deposition. High-resolution x-ray diffraction analysis revealed that there was a monotonic reduction in the full width at half maximum, both on-axis and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics