TITLE

Role of boron for defect evolution in hydrogen-implanted silicon

AUTHOR(S)
Lee, J. K.; Höchbauer, T.; Averitt, R. D.; Nastasi, M.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3042
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was more pronounced for nonactivated B. Infrared spectroscopy showed that the concentration of Si–H multivacancy defects was also decreased in the B+H coimplanted Si relative to H-only-implanted Si. These decreases in the damage and H-defect density suggest that the lower damage in the B+H coimplanted Si results from a reduction in H-trap density, which in turn enhances H diffusion and the kinetics of blistering. This reduction in lattice damage and H–Si-defect complexes is attributed to the formation of a kinetically active B–Si interstitial complex that is prevalent in nonactivated B-implanted Si. © 2003 American Institute of Physics.
ACCESSION #
11028798

 

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