TITLE

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

AUTHOR(S)
Zhenqiang Xi, Y.; Deren Yang; Jin Xu; Yujie Ji, Y.; Duanlin Que, Y.; Moeller, H. J.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3048
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon annealed at 1100 °C under air cooling was studied by means of scanning infrared microscopy (SIRM), optical microscopy (OM), and transmission electron microscopy (TEM). The SIRM images showed that, in the A-defect zone of the Cu-contaminated silicon wafers, the copper-precipitate colonies with larger size were observed, while in the D-defect zone almost no copper precipitates could be observed. However, the OM results revealed that the density of etching pits in the D-defect zone was higher than that in the A-defect zone, indicating that the copper precipitates with smaller size and higher density formed in the D-defect zone. The TEM investigation showed that the size of copper precipitate colonies in the A-defect zone was about 300 nm, while that in the D-defect zone was about 50 nm. It is considered that as-grown vacancies in the D-defect zone enhanced the nucleation of copper precipitates but hindered their growth, whereas the role of as-grown interstitial silicon on copper precipitation was inverse. © 2003 American Institute of Physics.
ACCESSION #
11028796

 

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