TITLE

Electronic structure of acceptor-donor complexes in silicon

AUTHOR(S)
Atoro, E.; Ohama, Y.; Hayafuji, Y.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3051
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In[sub 2]D (D=phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two indium In acceptor elements and a centered donor element D from the group V elements. Calculations are performed under the assumption that the three atoms are arranged in the nearest neighbor substitutional trimer configuration. Results indicate that the trimer complexes act as shallower acceptors having smaller ionization activation energies than In acceptor. The potential of In[sub 2]D as an acceptor in Si is then discussed and In[sub 2]D is proposed as a promising acceptor for the formation of channels and source/drains in ultralarge scaled integration. © 2003 American Institute of Physics.
ACCESSION #
11028795

 

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