TITLE

Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

AUTHOR(S)
Yoshitake, T.; Yatabe, M.; Itakura, M.; Kuwano, N.; Tomokiyo, Y.; Nagayama, K.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3057
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous iron silicide was reported to be semiconducting as well as β-FeSi[sub 2], and it has received considerable attention from both the physical and engineering points of view. However, there have been few studies and its basic properties are still unknown. We could grow the semiconducting nanocrystalline iron disilicide thin films by pulsed-laser deposition using an FeSi[sub 2] target. They consist of crystallites with diameters ranging from 3 to 5 nm. The carrier density and the mobility at 300 K were 1.5×10[sup 19] cm[sup -3] and 35 cm/V s, respectively. © 2003 American Institute of Physics.
ACCESSION #
11028793

 

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