Room-temperature epitaxial growth of GaN on conductive substrates

Ohta, J.; Fujioka, H.; Oshima, M.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3060
Academic Journal
We have grown GaN films on (Mn,Zn)Fe[sub 2]O[sub 4] (111) substrates by pulsed-laser deposition at room temperature and investigated their structural properties using reflection high-energy electron diffraction, atomic force microscopy, grazing-incidence x-ray reflectivity, and grazing-incidence x-ray diffraction (GIXD). We have found that GaN (0001) grows epitaxially even at room temperature. The room-temperature growth of GaN starts with the two-dimensional mode followed by the three-dimensional mode, which indicates that the precursors of GaN have large energy enough to migrate on the surface. GIXD measurements showed that the in-plane epitaxial relationship is GaN [11-20] // (Mn,Zn)Fe[sub 2]O[sub 4] [01-1] and approximately 90% of the lattice mismatch is released at the interface. These results indicate that the present technique solves one of the two major problems with epitaxial growth of GaN (mismatch in the thermal expansion coefficients) and alleviates the other problem (mismatch in the lattice constants). © 2003 American Institute of Physics.


Related Articles

  • Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates. Meng Wei; Xiaoliang Wang; Xu Pan; Hongling Xiao; Cuimei Wang; Cuibai Yang; Zhanguo Wang // Journal of Materials Science: Materials in Electronics;Aug2011, Vol. 22 Issue 8, p1028 

    Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the...

  • Structural and morphological studies of GaN thin films grown on different oriented LiNbO3substrates by MOVPE. T. Moudakir; G. Orsal; N. Maloufi; A. Sirenko; S. Gautier; M. Bouchaour; S. Ould Saad; J. Salvestrini; A. Ougazzaden // European Physical Journal - Applied Physics;Sep2008, Vol. 43 Issue 3, p295 

    GaN epilayers were grown by metal-organic vapor phase epitaxy (MOVPE) on z-and x-cut lithium niobate substrates. Ex-situ characterizations of the epilayers by means of scanning electron microscope, atomic force microscope, X-ray diffraction and micro-Raman scattering measurements have revealed...

  • Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy. Wang, Yiyi; Özcan, Ahmet S.; Sanborn, Christopher; Ludwig, Karl F.; Bhattacharyya, Anirban; Chandrasekaran, Ramya; Moustakas, Theodore D.; Zhou, Lin; Smith, David J. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p073522 

    Self-organized gallium nitride nanodots have been fabricated using droplet heteroepitaxy on c-plane sapphire by plasma-assisted molecular beam epitaxy at different substrate temperatures and Ga fluxes. Nanoscale Ga droplets were initially formed on the sapphire substrate at high temperatures by...

  • High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers. Hikaru Sato; Hidenori Hiramatsu; Toshio Kamiya; Hideo Hosono // Applied Physics Letters;5/5/2014, Vol. 104 Issue 18, p1 

    We report herein a high and isotropic critical-current density Jc for BaFe2(As,P)2 epitaxial films. The isotropy of Jc with respect to the magnetic-field direction was improved significantly by decreasing the film growth rate to 2.2Ã…/s. The low growth rate served to preferentially align...

  • Two-dimensional growth of lattice matched Nd-doped (Gd,Lu)2O3 films on Y2O3 by pulsed laser deposition. Gün, Teoman; Kahn, Andreas; Ileri, Bilge; Petermann, Klaus; Huber, Günter // Applied Physics Letters;8/4/2008, Vol. 93 Issue 5, p053108 

    This letter focuses on epitaxial growth of a 1-μm-thick lattice matched Nd-doped monocrystalline (Gd,Lu)2O3 film deposited on a {100} oriented Y2O3 substrate by pulsed laser deposition. Layer-by-layer growth indicated by in situ reflection high energy electron diffraction was observed up to...

  • Chirally oriented heteroepitaxial thin films grown by pulsed laser deposition: Pt(621) on SrTiO3(621). Francis, Andrew J.; Salvador, Paul A. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2482 

    Pulsed laser deposition has been used to grow Pt(621) thin films having a chiral orientation on SrTiO3(621) substrates. Films were deposited over a range of conditions, then characterized for their crystallinity and epitaxy using x-ray diffraction and for their surface morphologies using atomic...

  • Epitaxial growth of Ge-Sb-Te films on KCl by high deposition rate pulsed laser deposition. Thelander, E.; Gerlach, J. W.; Ross, U.; Frost, F.; Rauschenbach, B. // Journal of Applied Physics;2014, Vol. 115 Issue 21, p213504-1 

    Pulsed laser deposition was employed to deposit epitaxial Ge2Sb2Te5-layers (GST) on (100) oriented KCl-substrates. XRD-measurements show a process temperature window for epitaxial growth of the cubic phase between 200 and 300 °C. Below 250 °C (111) oriented GST dominates the growth process...

  • GaN grown on hydrogen plasma cleaned 6H-SiC substrates. Lin, M.E.; Strite, S.; Agarwal, A.; Salvador, A.; Zhou, G.L.; Teraguchi, N.; Rockett, A.; Morkoc, H. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p702 

    Reports the epitaxial gallium nitride (GaN) layers grown on 6H-silicon carbide (SiC) (0001) substrates. Techniques for the preparation of SiC substrate; Growth of high quality GaN on SiC substrates; Purpose of using the x-ray diffractometry.

  • Influence of surface bow on reconstruction on 2-inch SiC (0001) wafer. Zhu, Ming-Xing; Chen, Yi; Shi, Biao; Liu, Xue-Chao; Chang, Shao-Hui; Yan, Cheng-Feng; Yang, Jian-Hua; Shi, Er-Wei // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p023516 

    The step morphologies of a gas-etched 2-in. 6H-SiC (0001) wafer are investigated by the atomic force microscope. Due to the concave surface induced by bow, undulation surface morphologies were observed in the edge region. In the upside and downside region of the center along the <11[formula]0>...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics