Experimental and theoretical investigation on the structural properties of GaN grown on sapphire

Ohta, J.; Fujioka, H.; Oshima, M.; Fujiwara, K.; Ishii, A.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3075
Academic Journal
We have investigated the growth mechanisms of group-III nitrides on c-plane sapphire substrates with experiments by pulsed-laser deposition and first-principles calculations. It has been experimentally revealed that the in-plane alignment between the nitrides and sapphire is [10-10]nitride//[11-20]sapphire and the nitride films have the N polarity for the most cases. We have found that the insertion of an Al-rich AlN buffer layer effectively turns over the GaN crystals from the N polarity to the Ga polarity, although the Ga-rich GaN buffer layer does not cause change in the polarity. The theoretical energy calculations of a sapphire slab with an adatom explain the experimental results, such as the in-plane alignment and the polarity change, quite well. © 2003 American Institute of Physics.


Related Articles

  • Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates. Lei, T.; Ludwig, K. F.; Moustakas, T. D. // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4430 

    Reports on the heteroepitaxy, polymorphism and faulting in gallium nitride thin films on silicon and sapphire substrates. Growth and properties of gallium nitride films; Polymorphs in which gallium nitride exists; Details of an schematic of the Eulerian four-circle diffraction geometry.

  • Resonantly enhanced femtosecond second-harmonic generation and nonlinear luminescence in GaN film grown on sapphire. Yang, Hui; Xu, S. J.; Li, Q.; Jie Zhang // Applied Physics Letters;4/17/2006, Vol. 88 Issue 16, p161113 

    At room temperature, by using a tunable broadband femtosecond laser as excitation source we observed second-harmonic generation (SHG) and nonlinear photoluminescence (NPL) in GaN film grown on sapphire simultaneously or individually. In addition to the observation of the resonance effect of the...

  • Optical properties of GaN epilayers on sapphire. Tchounkeu, Magloire; Briot, Olivier; Gil, Bernard; Alexis, Jean Paul; Aulombard, Roger-Louis // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5352 

    Deals with a study which investigated the optical properties of gallium nitride epilayers grown by metal-organic vapor-phase epitaxy on (0001)-oriented sapphire. Experimental procedures used in growing the epilayers; Analysis of optical properties; Conclusion.

  • Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy. Kurobe, T.; Sekiguchi, Y.; Suda, J.; Yoshimoto, M.; Matsunami, H. // Applied Physics Letters;10/19/1998, Vol. 73 Issue 16 

    Preferential growth of high-quality cubic GaN on sapphire (0001) substrates was realized at 800 °C under a Ga-rich condition by metal organic molecular beam epitaxy. Hexagonal GaN was grown under a N-rich condition. On the contrary, under the Ga-rich condition, the growing layer changed from...

  • Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films. Kim, Bosang; Kuskovsky, I. // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p2034 

    Deals with a study that observed ultraviolet-induced modifications in undoped metalorganic chemical vapor deposition grown GaN on sapphire. Experimental procedure; Results; Discussion.

  • Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance. Krystek, Wojciech; Pollak, Fred H.; Feng, Z. C.; Schurman, M.; Stall, R. A. // Applied Physics Letters;3/16/1998, Vol. 72 Issue 11 

    Using contactless electroreflectance at room temperature, we have nondestructively evaluated the band bending (carrier-type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the InGaN/GaN interface of samples of epitaxial InGaN, having...

  • AlxGa1-xN polarity determination by x-ray diffraction. Horning, R. D.; Goldenberg, B. L. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1721 

    The crystallographic polarities of (0001) oriented AlxGa1-xN epitaxial layers grown on basal plane sapphire were determined using the anomalous dispersion effect of x-ray diffraction. Integrated intensities of three (00l) reflections were measured using the Lγ1 and Lβ2 excitation lines...

  • On an Unusual Azimuthal Orientational Relationship in the System Gallium Nitride Layer on Spinel Substrate. Efimov, A. N.; Lebedev, A. O.; Lundin, V. V.; Usikov, A. S. // Crystallography Reports;Mar2000, Vol. 45 Issue 2, p312 

    Possible types of orientational relationships for hexagonal and cubic gallium nitride layers on aluminum-magnesium spinel substrates with various crystallographic orientations have been determined as a result of the theoretical and the experimental studies of this system. Most of the...

  • Reduction in crystallographic tilting of lateral epitaxial overgrown GaN by removal of oxide mask. Kim, Min Hong; Choi, Yoonho; Yi, Jaehyung; Yang, Min; Jeon, Jina; Khym, Sungwon; Leem, Shi-Jong // Applied Physics Letters;9/10/2001, Vol. 79 Issue 11 

    The lateral overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition. SiO[sub 2] mask was removed just before coalescence and a subsequent lateral overgrowth was carried out to complete the fabrication of a SiO[sub 2]-removed lateral epitaxial overgrown (LEO) GaN...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics