TITLE

Experimental and theoretical investigation on the structural properties of GaN grown on sapphire

AUTHOR(S)
Ohta, J.; Fujioka, H.; Oshima, M.; Fujiwara, K.; Ishii, A.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3075
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the growth mechanisms of group-III nitrides on c-plane sapphire substrates with experiments by pulsed-laser deposition and first-principles calculations. It has been experimentally revealed that the in-plane alignment between the nitrides and sapphire is [10-10]nitride//[11-20]sapphire and the nitride films have the N polarity for the most cases. We have found that the insertion of an Al-rich AlN buffer layer effectively turns over the GaN crystals from the N polarity to the Ga polarity, although the Ga-rich GaN buffer layer does not cause change in the polarity. The theoretical energy calculations of a sapphire slab with an adatom explain the experimental results, such as the in-plane alignment and the polarity change, quite well. © 2003 American Institute of Physics.
ACCESSION #
11028787

 

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