Temperature-dependent Cl[sub 2]/Ar plasma etching of bulk single-crystal ZnO

Lim, W. T.; Baek, I. K.; Lee, J. W.; Lee, E. S.; Jeon, M. H.; Cho, G. S.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3105
Academic Journal
The etch rate of bulk ZnO in Cl[sub 2]/Ar high density plasmas was found to be thermally activated with an activation energy of ∼0.31 eV at <300 °C. The rate-limiting step appears to be the ion-assisted desorption of the ZnCl[sub X] etch products. The threshold ion energy for etching ZnO at 150 °C in Cl[sub 2]/Ar is ∼170 eV, obtained by fitting to a model of ion-enhanced sputtering by a collision-cascade process. The amount of residual chlorine on the ZnO surface decreases with increasing etch temperature, but there is a tendency for the surface to become Zn-rich and roughen at elevated temperatures (>200 °C). © 2003 American Institute of Physics.


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