Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

Luna, E.; Hopkinson, M.; Ulloa, J. M.; Guzmán, A.; Muñoz, E.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3111
Academic Journal
Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-Å GaAs[sub 1-y]N[sub y] (y≈0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 °C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs. © 2003 American Institute of Physics.


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