TITLE

Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared

AUTHOR(S)
Luna, E.; Hopkinson, M.; Ulloa, J. M.; Guzmán, A.; Muñoz, E.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-Å GaAs[sub 1-y]N[sub y] (y≈0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 °C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs. © 2003 American Institute of Physics.
ACCESSION #
11028775

 

Related Articles

  • Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing. Young Min Park; Young Ju Park; Kwang Moo Kim; Jin Dong Song; Jung II Lee; Keon-Ho Yoo; Hyung Seok Kim; Chan Gyung Park // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5496 

    Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a...

  • Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy. Pan, Z.; Li, L. H.; Zhang, W.; Lin, Y. W.; Wu, R. H.; Ge, W. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 °C) and high temperature (HT, 900 °C) could both improve the QW quality...

  • Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission. Ishikawa, Fumitaro; Höricke, Michael; Jahn, Uwe; Trampert, Achim; Ploog, Klaus H. // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p191115 

    We grow high-quality (Ga,In)(N,As) quantum wells containing 36% In and 4.5% N by molecular beam epitaxy, with a low As pressure and low substrate temperature growth concept. A V/III beam equivalent pressure ratio of 5 and a substrate temperature of 375 °C lead to highly regular ten-period...

  • Low-temperature-grown GaAs quantum wells: Femtosecond nonlinear optical and parallel-field.... Knox, W.H.; Doran, G.E.; Asom, M.; Livescu, G.; Leibenguth, R.; Chu, S.N.G. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1491 

    Investigates the growth of gallium arsenide quantum wells grown at low temperature by molecular beam epitaxy. Exhibition of a broadened excitonic resonance; Analysis of the femtosecond time-resolved nonlinear optical saturation; Formation of arsenic metallic precipitates.

  • Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires. Schuster, R.; Hajak, H.; Reinwald, M.; Wegscheider, W.; Schuh, D.; Bichler, M.; Abstreiter, G. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3672 

    We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely from the tensile strain field of InAlAs layers...

  • Growth and characterization of BeCdSe alloys and BeCdSe/ZnCdMgSe quantum wells on InP substrates. Maksimov, O.; Guo, S. P.; Tamargo, M. C. // Applied Physics Letters;4/23/2001, Vol. 78 Issue 17, p2473 

    We report the molecular-beam-epitaxy growth and characterization of Be[sub x]Cd[sub 1-x]Se (0.06

  • Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy. Shih, Y. T.; Tsai, Y. L.; Yuan, C. T.; Chen, C. Y.; Yang, C. S.; Chou, W. C. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7267 

    This work investigates photoluminescence (PL) spectra from ZnSexTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching...

  • Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing. Chang, Y. C.; Merckling, C.; Penaud, J.; Lu, C. Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M. // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p112901 

    To effectively passivate the technologically important GaAs (001) surfaces, in situ deposition of Al2O3 was carried out with molecular beam epitaxy. The impacts of initial GaAs surface reconstruction and post-deposition annealing have been systematically investigated. The corresponding...

  • Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy. Zhao, H.; Xu, Y. Q.; Ni, H. Q.; Zhang, S. Y.; Wu, D. H.; Han, Q.; Wu, R. H.; Niu, Z. C. // Journal of Applied Physics;2/1/2006, Vol. 99 Issue 3, p034903 

    Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics