Reliable strain determination method for InGaAsN/GaAs quantum wells using a simple photoluminescence measurement

Kim, N. J.; Jang, Y. D.; Lee, D.; Park, K. H.; Jeong, Weon G.; Jang, J. W.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3114
Academic Journal
We present a reliable method for determining the strain in InGaAsN quantum wells. The method uses the fact that the splitting between heavy hole and light hole energy levels depends mostly on the strain. We also found that the strain was largely relaxed in an In[sub 0.34]Ga[sub 0.66]As/GaAs quantum well, but recovered when a small amount of nitrogen was added to the In[sub 0.34]Ga[sub 0.66]As layer. © 2003 American Institute of Physics.


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