TITLE

Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

AUTHOR(S)
Gámiz, F.; Cartujo-Cassinello, P.; Jiménez-Molinos, F.; Carceller, J. E.; Cartujo, P.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3120
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study the influence of the image and exchange-correlation effects in double-gate silicon-on-insulator (DGSOI) devices, in the calculation of both charge distribution and electron mobility. The image and exchange correlation potentials produce a greater confinement of the carriers and, according to the uncertainty principle, a greater phonon scattering rate, which produces a decrease in electron mobility. Moreover, the influence of image and exchange-correlation potentials on electron mobility, while almost negligible for bulk silicon inversion layers, becomes increasingly important as the silicon thickness decreases, due to the effect of volume inversion in DGSOI inversion layers. These effects must then be taken into account in order to achieve a correct evaluation of the charge distribution and of mobility in DGSOI inversion layers. © 2003 American Institute of Physics.
ACCESSION #
11028772

 

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