Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

Schowalter, M.; Rosenauer, A.; Gerthsen, D.; Grau, M.; Amann, M.-C.
October 2003
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3123
Academic Journal
We investigated the influence of growth interruptions on the morphology of molecular-beam epitaxy grown GaSb/GaAs multiquantum-well structures by transmission electron microscopy (TEM). Profiles of the chemical composition of the GaSb layers were deduced from high-resolution TEM images with the lattice fringe analysis method. We found clear indications of segregation of Sb in GaAs-on-GaSb for a sample grown with growth interruption before and after the growth of the quantum wells. Its efficiency R=0.78±0.03 was derived by fitting the measured composition profiles with the model of Muraki. Determination of the total amounts of deposited GaSb yields a higher amount of GaSb in a sample grown without interruption. © 2003 American Institute of Physics.


Related Articles

  • Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wells. Vieu, C.; Schneider, M.; Launois, H.; Descouts, B. // Journal of Applied Physics;5/15/1992, Vol. 71 Issue 10, p4833 

    Presents information on a study which investigated the damage generation and its annealing behavior in gallium arsenide (GaAs)/(Ga,aluminum (Al))As quantum wells (QW) after Ga[⊃+] implantation at room temperature, by transmission electron microscopy. Implantation and annealing of the...

  • Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy. Clausen, E. M.; Kapon, E.; Tamargo, M. C.; Hwang, D. M. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p776 

    We report cathodoluminescence (CL) imaging and transmission electron microscopy (TEM) studies of patterned GaAs/AlAs quantum well (QW) heterostructures grown by molecular beam epitaxy on periodically corrugated substrates. Faceting and surface diffusion during crystal growth result in...

  • Photoluminescence of Heterostructures with Highly Strained Ga0.76In0.24As Quantum Wells Separated by GaAsyP1 � y Compensating Barriers. Shamakhov, V. V.; Vinokurov, D. A.; Stankevich, A. L.; Kapitonov, V. A.; Zorina, S. A.; Nikolaev, D. N.; Murashova, A. V.; Bondarev, A. D.; Tarasov, I. S. // Technical Physics Letters;Dec2005, Vol. 31 Issue 12, p993 

    Based on the results of model calculations and the data of photoluminescence measurements and transmission electron microscopy, the optimum composition (GaAs0.85P0.15) of compensating barriers for a structure with four highly strained Ga0.76In0.24As quantum wells (QWs) has been established that...

  • Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy. Schaus, C. F.; Shealy, J. R.; Eastman, L. F.; Cooman, B. C.; Carter, C. B. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p678 

    Investigates the properties of gallium arsenide and aluminum gallium arsenide quantum well heterostructures using transmission electron microscopy together with photoluminescence. Description of modifications to the reactor; Element used to characterize heterostructures; Factor used to...

  • Photoluminescence line shape of excitons in GaAs single-quantum wells with and without heterointerface ordering. Fujiwara, K.; Kanamoto, K.; Tsukada, N.; Miyatake, H.; Koyama, H. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1488 

    Presents information on a study which investigated the photoluminescence line shape of excitons at low temperatures in gallium arsenide (GaAs) single-quantum wells (SQW) grown by molecular beam epitaxy with and without intentional heterointerface ordering. Examination of the samples by...

  • Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by... Soga, T.; George, T.; Jimbo, T.; Umeno, M.; Weber, E.R. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1170 

    Discusses the characterization of gallium arsenide (GaAs) and aluminum GaAs grown directly on silicon by transmission electron microscopy. Presence of high density of dislocations, stacking faults and microtwins in the thin GaAs layers; Reduction of defects in the planar AlGaAs nucleation layer.

  • High resolution transmission electron microscopy of proton-implanted gallium arsenide. Sadana, D. K.; Zavada, J. M.; Jenkinson, H. A.; Sands, T. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p691 

    High resolution transmission electron microscopy has been performed on cross-sectional specimens from high dose (1016 cm-2) H+-implanted (100) n-GaAs (300 keV at room temperature). It was found that annealing at 500 °C created small (20–50 Å) loops on {111} planes near the...

  • Reactions in Pd/GaAs(001) contacts at 7x10[sub 8] Pa pressure. Zhao, Y.C.; Wu, Z.Q. // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p349 

    Presents the transmission electron microscopy and x-ray diffraction studies of Pd/GaAs contacts that were annealed in an argon ambient with a pressure of 7 x 10[sup 8] Pa. Ability of the ambient to inhibit the decomposition of As-rich phases and the reactions accompanying the As sublimation for...

  • Strain relaxation of CdTe(100) layers grown by hot-wall epitaxy on GaAs(100) substrates. Tatsuoka, H.; Kuwabara, H.; Nakanishi, Y.; Fujiyasu, H. // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p6860 

    Deals with a study which investigated the strain relaxation of CdTe layers grown on gallium arsenide substrates by hot-wall epitaxy by measurement of optical properties, x-ray analysis and transmission electron microscopy. Experimental details; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics