TITLE

Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

AUTHOR(S)
Schowalter, M.; Rosenauer, A.; Gerthsen, D.; Grau, M.; Amann, M.-C.
PUB. DATE
October 2003
SOURCE
Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3123
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the influence of growth interruptions on the morphology of molecular-beam epitaxy grown GaSb/GaAs multiquantum-well structures by transmission electron microscopy (TEM). Profiles of the chemical composition of the GaSb layers were deduced from high-resolution TEM images with the lattice fringe analysis method. We found clear indications of segregation of Sb in GaAs-on-GaSb for a sample grown with growth interruption before and after the growth of the quantum wells. Its efficiency R=0.78±0.03 was derived by fitting the measured composition profiles with the model of Muraki. Determination of the total amounts of deposited GaSb yields a higher amount of GaSb in a sample grown without interruption. © 2003 American Institute of Physics.
ACCESSION #
11028771

 

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